Loading...

ST631K

STMicroelectronics

ST631K by STMicroelectronics

ST631K by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 12.5W, operates up to 150 °C, and supports collector-emitter voltages of 120V. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,395 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,395

-

-

-

-

Digiode

USA . 961 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

961

-

-

-

-

Anansix

USA . 455 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

455

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,790 parts In-Stock

1+ parts

$1.567

100+ parts

-

1k+ parts

$1.410

10k+ parts

-

1,790

$1.567

-

$1.410

-

MKK Technologies

India . 1,203 parts In-Stock

1+ parts

$2.946

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

$2.946

-

-

-

DigiPath Technology Company

USA . 1,203 parts In-Stock

1+ parts

$2.946

100+ parts

-

1k+ parts

-

10k+ parts

-

1,203

$2.946

-

-

-

AZTECH Wire

Italy . 592 parts In-Stock

1+ parts

$9.650

100+ parts

-

1k+ parts

-

10k+ parts

-

592

$9.650

-

-

-

Component Stockers USA

USA . 264 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

264

$99.990

-

-

-

Alle Elektronik GmbH

Germany . 3,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,611

-

-

-

-

Corphita

USA . 2,769 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,769

-

-

-

-

Parana Technologies

USA . 1,807 parts In-Stock

1+ parts

-

100+ parts

$1.873

1k+ parts

-

10k+ parts

-

1,807

-

$1.873

-

-

Overview

Unlock exceptional performance with the ST631K from STMicroelectronics, a leader in innovation and quality. This PNP power BJT is designed for efficient switching applications, delivering reliable power handling in a compact package. Ideal for diverse electronic projects, its robust construction ensures durability and longevity. Experience seamless integration and superior reliability that enhances your designs, making the ST631K the smart choice for every engineer seeking excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy materials ensure protection against environmental factors and enhance longevity.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration in specific circuit designs, facilitating versatile application.

Configuration: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Transistor Application: SWITCHING

Designed for switching applications, making it ideal for power management in various electronic devices.

Package Shape: RECTANGULAR

Rectangular shape aids in space-efficient layouts and integration into compact electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and are easier to solder, enhancing reliability.

No. of Terminals: 3

Three terminals offer necessary connectivity for versatile circuit configurations and simplified circuitry.

Maximum Power Dissipation (Abs): 12.5 W

High power dissipation capability enables handling of significant power levels, suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability in installations, ensuring secure placement in various devices.

Minimum DC Current Gain (hFE): 50

A minimum gain of 50 indicates effective amplification abilities, enhancing signal processing in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature expands application ranges, making it suitable for harsh environments.

Maximum Collector-Emitter Voltage: 120 V

Ability to handle up to 120 V of voltage makes it suitable for a wide array of electrical applications.

Transistor Element Material: SILICON

Silicon material provides reliable performance and efficiency in electronic applications.

Maximum Collector Current (IC): 1 A

A maximum collector current of 1 A allows the transistor to drive loads effectively in various circuits.

Terminal Finish: Matte Tin (Sn)

Matte tin finish offers good solderability and corrosion resistance, enhancing longevity and reliability.

Terminal Position: SINGLE

Single terminal position simplifies design considerations and eases integration into circuit boards.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST631K attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

120 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST631K Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.