Loading...

BUL1203EFP

STMicroelectronics

BUL1203EFP by STMicroelectronics

BUL1203EFP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 550 V, a power dissipation of 36 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,137

-

-

-

-

Digiode

USA . 2,725 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,725

-

-

-

-

Anansix

USA . 2,173 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,173

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 597 parts In-Stock

1+ parts

$0.741

100+ parts

-

1k+ parts

$0.667

10k+ parts

-

597

$0.741

-

$0.667

-

Native Components

USA . 409 parts In-Stock

1+ parts

$0.748

100+ parts

-

1k+ parts

-

10k+ parts

-

409

$0.748

-

-

-

Corohmni

South Africa . 448 parts In-Stock

1+ parts

$0.820

100+ parts

-

1k+ parts

-

10k+ parts

-

448

$0.820

-

-

-

Northwest PG Solutions

USA . 576 parts In-Stock

1+ parts

$0.823

100+ parts

-

1k+ parts

-

10k+ parts

-

576

$0.823

-

-

-

MKK Technologies

India . 2,344 parts In-Stock

1+ parts

$1.393

100+ parts

-

1k+ parts

-

10k+ parts

-

2,344

$1.393

-

-

-

DigiPath Technology Company

USA . 2,344 parts In-Stock

1+ parts

$1.393

100+ parts

-

1k+ parts

-

10k+ parts

-

2,344

$1.393

-

-

-

Advanced Electronics

New Zealand . 870 parts In-Stock

1+ parts

$1.691

100+ parts

$1.539

1k+ parts

$1.387

10k+ parts

-

870

$1.691

$1.539

$1.387

-

AZTECH Wire

Italy . 965 parts In-Stock

1+ parts

$9.390

100+ parts

-

1k+ parts

-

10k+ parts

-

965

$9.390

-

-

-

Component Stockers USA

USA . 794 parts In-Stock

1+ parts

$99.990

100+ parts

-

1k+ parts

-

10k+ parts

-

794

$99.990

-

-

-

Alle Elektronik GmbH

Germany . 3,588 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,588

-

-

-

-

Corphita

USA . 2,158 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,158

-

-

-

-

Parana Technologies

USA . 1,281 parts In-Stock

1+ parts

-

100+ parts

$0.886

1k+ parts

-

10k+ parts

-

1,281

-

$0.886

-

-

Perfect Parts

USA . 1,114 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,114

-

-

-

-

Overview

Unlock the potential of your designs with the BUL1203EFP from STMicroelectronics—an NPN power BJT that combines reliability and performance for all your switching applications. Crafted from premium materials and designed for longevity, this transistor ensures exceptional power handling up to 36W and withstands temperatures up to 150 °C. Experience enhanced efficiency and robustness in your projects, empowering you to create innovative solutions with confidence. Choose STMicroelectronics for quality that drives success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used for amplification and switching applications in electronic circuits, providing ease of integration.

Configuration: SINGLE

The single configuration allows for straightforward circuit design, making it a versatile choice for a range of applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT excels in rapidly turning on and off, enhancing performance in power management.

Package Shape: RECTANGULAR

The rectangular package shape simplifies mounting in various configurations, improving installation flexibility.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide reliable mechanical and electrical connections, which are crucial for high-power applications.

No. of Terminals: 3

With three terminals, this transistor offers a straightforward connection setup, facilitating easy circuit design and assembly.

Maximum Power Dissipation: 36 W

A high maximum power dissipation rating ensures robust performance under load, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for better thermal management and mechanical stability, essential for high-power devices.

Minimum DC Current Gain (hFE): 9

A minimum DC current gain of 9 ensures adequate amplification for low-power signals, maximizing efficiency in various circuits.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures makes this transistor reliable in extreme environments, enhancing durability.

Maximum Collector-Emitter Voltage: 550 V

A high collector-emitter voltage rating allows this BJT to handle substantial voltage levels, providing versatility in high-voltage applications.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material that offers excellent performance and stability in various electronic applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current rating of 5 A, this transistor is well-suited for power applications, ensuring efficient current handling.

Terminal Finish: MATTE TIN

The matte tin terminal finish enhances solderability and provides good corrosion resistance, improving long-term reliability.

Terminal Position: SINGLE

A single terminal position simplifies the layout design, making it easier to incorporate into various circuit configurations.

Case Connection: ISOLATED

An isolated case connection minimizes the risk of short circuits, ensuring safer operation in sensitive electronic environments.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL1203EFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

550 V

Configuration:

Minimum DC Current Gain (hFE):

9

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL1203EFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20