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BUL146BC

Onsemi

BUL146BC by Onsemi

The Onsemi BUL146BC is a NPN Power BJT with max. VCE of 400V and IC of 6A. With hFE of min. 8, it's ideal for switching applications at up to 150 °C. Its rectangular package with through-hole terminals makes it suitable for flange mount configurations in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,168 parts In-Stock

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Vyrian

USA . 1,233 parts In-Stock

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Problanco Electronics

Mexico . 6,798 parts In-Stock

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TANS Electronics

Latvia . 3,275 parts In-Stock

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Kulean Microsystems

USA . 2,828 parts In-Stock

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Northwest PG Solutions

USA . 1,998 parts In-Stock

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SupplyDigital Components

Austria . 1,215 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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Native Components

USA . 604 parts In-Stock

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Corphita

USA . 358 parts In-Stock

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Corohmni

South Africa . 165 parts In-Stock

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Overview

The BUL146BC by Onsemi is a powerhouse in the realm of Power Bipolar Junction Transistors (BJT), offering reliable performance and durability. Manufactured by Onsemi, a trusted name in the industry, this NPN transistor is ideal for switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 6A, this transistor is designed to handle high-power tasks with ease. Its flange mount package style ensures easy installation, making it a versatile choice for various projects. Experience the quality and efficiency of the BUL146BC and elevate your electronic designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in various electronic applications.

Configuration: SINGLE

Simplifies circuit design and integration by having only one transistor in the package.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, making it suitable for power switching circuits.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage applications with ease, increasing the range of potential applications for this transistor.

Maximum Collector Current (IC): 6 A

Capable of handling high currents, making it suitable for power applications that require a significant amount of current.

Nominal Transition Frequency (fT): 14 MHz

Offers high frequency performance, making it suitable for applications where high-speed switching is required.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146BC attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146BC Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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