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BUL146AS

Onsemi

BUL146AS by Onsemi

BUL146AS by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 6A, and hFE of 8. Ideal for switching applications, it operates up to 150 °C with a fT of 14MHz. Its through-hole terminals and flange mount make it suitable for various power electronics designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,472 parts In-Stock

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Digiode

USA . 327 parts In-Stock

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327

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Problanco Electronics

Mexico . 7,150 parts In-Stock

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TANS Electronics

Latvia . 5,747 parts In-Stock

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SupplyDigital Components

Austria . 3,774 parts In-Stock

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Corphita

USA . 2,299 parts In-Stock

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2,299

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Northwest PG Solutions

USA . 2,080 parts In-Stock

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Kulean Microsystems

USA . 1,846 parts In-Stock

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1,846

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UHIMA Technologies

Türkiye . 736 parts In-Stock

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736

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Native Components

USA . 100 parts In-Stock

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Corohmni

South Africa . 69 parts In-Stock

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Overview

Upgrade your power management system with the BUL146AS from Onsemi, a leading manufacturer known for reliability and innovation in the field of Power Bipolar Junction Transistors (BJT). This NPN transistor is ideal for switching applications, offering a maximum collector-emitter voltage of 400V and a maximum collector current of 6A. With a minimum DC current gain of 8 and a nominal transition frequency of 14 MHz, this transistor provides unmatched performance and efficiency. Trust Onsemi to deliver high-quality components that meet your power needs, ensuring optimal functionality and durability in your electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatile functionality.

Configuration: SINGLE

Simplifies the circuit design and allows for easy integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in these scenarios.

Package Shape: RECTANGULAR

Facilitates easy mounting and installation in electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure connections and easier soldering during assembly.

No. of Terminals: 3

Provides the necessary connections for proper functionality while keeping the transistor compact.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting in electronic equipment, ensuring stability and reliability.

Minimum DC Current Gain (hFE): 8

Ensures consistent and reliable performance in various circuit configurations.

Maximum Operating Temperature: 150 °C

Suitable for applications where elevated temperatures may be encountered, without sacrificing performance.

Maximum Collector-Emitter Voltage: 400 V

Sufficient voltage handling capability for a wide range of applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 6 A

Capable of handling high currents, making it suitable for applications that require power switching.

Terminal Finish: TIN LEAD

Provides good conductivity and solderability for reliable electrical connections.

Terminal Position: SINGLE

Simplifies circuit layout and connections for easier integration into electronic systems.

Case Connection: COLLECTOR

Clearly defines the connection point for the collector terminal, ensuring proper circuit design and operation.

Nominal Transition Frequency (fT): 14 MHz

Indicates the frequency at which the transistor can effectively switch signals, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AS attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AS Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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