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BUL146BG

Onsemi

BUL146BG by Onsemi

BUL146BG by Onsemi is a NPN Power BJT with max. Vce of 400V, Ic of 6A, and hFE of 8. Ideal for switching applications, it operates up to 150 °C with a transition frequency of 14MHz. The transistor comes in a plastic/epoxy package with flange mount style and through-hole terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,346 parts In-Stock

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Digiode

USA . 921 parts In-Stock

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Kulean Microsystems

USA . 6,829 parts In-Stock

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SupplyDigital Components

Austria . 6,548 parts In-Stock

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Problanco Electronics

Mexico . 3,339 parts In-Stock

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TANS Electronics

Latvia . 2,409 parts In-Stock

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Corphita

USA . 1,049 parts In-Stock

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UHIMA Technologies

Türkiye . 712 parts In-Stock

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Northwest PG Solutions

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Corohmni

South Africa . 481 parts In-Stock

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Overview

Enhance your power control solutions with the BUL146BG by Onsemi. As a leading manufacturer in the industry, Onsemi ensures top-notch quality and reliability in their Power Bipolar Junction Transistors (BJT). Ideal for switching applications, the BUL146BG offers a maximum Collector-Emitter Voltage of 400V and a Maximum Collector Current of 6A, providing superior performance in various electronic devices. Experience the convenience of its THROUGH-HOLE terminal form and FLANGE MOUNT package style, making installation a breeze. Trust Onsemi to deliver exceptional value and efficiency with the BUL146BG, your go-to choice for power management needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, ensuring durability and reliability in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, making this product suitable for efficient switching operations.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers high performance and efficiency in controlling electrical signals.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising its functionality.

Maximum Collector-Emitter Voltage: 400 V

The high collector-emitter voltage rating allows this transistor to be used in a wide range of applications that require high voltage handling capabilities.

Maximum Collector Current (IC): 6 A

The high collector current rating makes this transistor suitable for applications that require the control of high current loads.

Nominal Transition Frequency (fT): 14 MHz

With a high transition frequency, this transistor can switch signals at a fast rate, making it ideal for high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146BG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146BG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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