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BUL146DW

Onsemi

BUL146DW by Onsemi

BUL146DW by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 400V, max. collector current of 6A, and min. DC current gain of 8. Ideal for switching applications due to its single configuration and rectangular package style (flange mount). Operating at up to 150 °C, it is suitable for high-power tasks requiring efficient transistor performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,142 parts In-Stock

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Digiode

USA . 1,540 parts In-Stock

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1,540

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Native Components

USA . 195 parts In-Stock

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$0.960

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195

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Northwest PG Solutions

USA . 1,971 parts In-Stock

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$1.056

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TANS Electronics

Latvia . 6,810 parts In-Stock

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Problanco Electronics

Mexico . 6,250 parts In-Stock

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Kulean Microsystems

USA . 5,318 parts In-Stock

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SupplyDigital Components

Austria . 3,144 parts In-Stock

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Corphita

USA . 921 parts In-Stock

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921

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UHIMA Technologies

Türkiye . 816 parts In-Stock

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Corohmni

South Africa . 494 parts In-Stock

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Overview

Unleash the power of innovation with the BUL146DW by Onsemi, a top-of-the-line Power Bipolar Junction Transistor designed for switching applications. Crafted with precision and expertise by Onsemi, this NPN transistor offers unparalleled quality and performance. Whether you're looking to optimize your electronics or enhance your projects, the BUL146DW delivers exceptional value and reliability. Experience seamless functionality and efficiency with this cutting-edge component that guarantees superior results every time. Elevate your creations with the BUL146DW and witness the difference it makes in your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring its longevity and reliability.

Polarity or Channel Type: NPN

Commonly used for a variety of applications, offering versatility in circuit design.

Configuration: SINGLE

Simplifies circuit design by using only one transistor in the package.

Transistor Application: SWITCHING

Ideal for switching applications where high efficiency and fast response times are required.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy soldering onto circuit boards for secure connections.

No. of Terminals: 3

Simplifies the circuit layout and connections required for the transistor.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and connection of the transistor in various applications.

Minimum DC Current Gain (hFE): 8

Provides consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Suitable for a wide range of operating environments without risking damage to the transistor.

Maximum Collector-Emitter Voltage: 400 V

Allows for high voltage applications with increased reliability and safety.

Transistor Element Material: SILICON

Offers superior performance and durability compared to other materials.

Maximum Collector Current (IC): 6 A

Capable of handling high current loads with efficiency.

Terminal Finish: TIN LEAD

Provides a reliable and durable finish for the terminals to ensure long-term performance.

Terminal Position: SINGLE

Simplifies the connection to the circuit board and reduces the risk of errors.

Case Connection: COLLECTOR

Provides a secure connection for the collector terminal of the transistor.

Nominal Transition Frequency (fT): 14 MHz

Indicates the speed at which the transistor can switch between on and off states, suitable for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146DW attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146DW Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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