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BUL146FG

Onsemi

BUL146FG by Onsemi

BUL146FG by Onsemi is a NPN Power BJT with 400V VCEO, 6A IC, and 40W Ptot. Ideal for switching applications, it has a hFE of 8 and operates up to 150 °C. The transistor comes in a plastic/epoxy package with through-hole terminals.

Median Price

$0.925

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 20 parts In-Stock

1+ parts

-

100+ parts

$0.925

1k+ parts

$0.767

10k+ parts

$0.684

20

-

$0.925

$0.767

$0.684

Avnet

USA . 20 parts In-Stock

1+ parts

-

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20

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Distributors (In-Stock)

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Digiode

USA . 1,478 parts In-Stock

1+ parts

$0.756

100+ parts

-

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1,478

$0.756

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Vyrian

USA . 4,285 parts In-Stock

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4,285

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Distributors (Availability)

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Corphita

USA . 498 parts In-Stock

1+ parts

$0.716

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-

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498

$0.716

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Corohmni

South Africa . 113 parts In-Stock

1+ parts

$0.796

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113

$0.796

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Kulean Microsystems

USA . 7,038 parts In-Stock

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7,038

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Problanco Electronics

Mexico . 6,590 parts In-Stock

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TANS Electronics

Latvia . 5,117 parts In-Stock

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SupplyDigital Components

Austria . 5,095 parts In-Stock

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5,095

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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A-Z Elektronik GmbH

Germany . 4,814 parts In-Stock

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4,814

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Alle Elektronik GmbH

Germany . 3,209 parts In-Stock

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Northwest PG Solutions

USA . 1,308 parts In-Stock

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UHIMA Technologies

Türkiye . 853 parts In-Stock

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853

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Native Components

USA . 556 parts In-Stock

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556

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Robosynatics

Brazil . 200 parts In-Stock

1+ parts

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100+ parts

$1.867

1k+ parts

$1.729

10k+ parts

$1.729

200

-

$1.867

$1.729

$1.729

Lucentia Tech

USA . 200 parts In-Stock

1+ parts

-

100+ parts

$1.867

1k+ parts

$1.729

10k+ parts

$1.729

200

-

$1.867

$1.729

$1.729

Overview

Power up your projects with the BUL146FG by Onsemi, a high-quality Power Bipolar Junction Transistor that offers unmatched performance and reliability. Manufactured by industry leader Onsemi, this NPN transistor is perfect for switching applications, delivering a maximum power dissipation of 40W and a maximum collector-emitter voltage of 400V. With a minimum DC current gain of 8 and a peak reflow temperature of 260 °C, this transistor is designed to meet your power needs with ease. Trust Onsemi for top-of-the-line transistors that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to integrate into various applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding environments.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltages, making it suitable for applications requiring voltage amplification or switching.

Maximum Collector Current (IC): 6 A

Capable of handling high currents, ideal for applications requiring power amplification or switching.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146FG attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146FG Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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