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BUL147

Onsemi

BUL147 by Onsemi

BUL147 by Onsemi is a NPN Power BJT with 400V VCEO, 8A IC, and 125W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The transistor comes in a plastic/epoxy package with through-hole terminals suitable for flange mount style.

Median Price

$0.925

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$0.925

1k+ parts

$0.767

10k+ parts

$0.684

50

-

$0.925

$0.767

$0.684

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,043 parts In-Stock

1+ parts

$0.720

100+ parts

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1,043

$0.720

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Vyrian

USA . 2,789 parts In-Stock

1+ parts

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2,789

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ComSIT Distribution GmbH

Germany . 454 parts In-Stock

1+ parts

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454

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Bristol Electronics

USA . 90 parts In-Stock

1+ parts

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90

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Manotoh

Italy . 50 parts In-Stock

1+ parts

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50

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ACDS - Activité Composants Distribution Service

France . 24 parts In-Stock

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Electronics Depot

USA . 15 parts In-Stock

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15

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LittleDiode

UK . 13 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 9 parts In-Stock

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9

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,011 parts In-Stock

1+ parts

$0.682

100+ parts

-

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2,011

$0.682

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Corohmni

South Africa . 73 parts In-Stock

1+ parts

$0.758

100+ parts

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73

$0.758

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Component Stockers USA

USA . 61 parts In-Stock

1+ parts

$0.770

100+ parts

-

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61

$0.770

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Native Components

USA . 760 parts In-Stock

1+ parts

$30.162

100+ parts

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10k+ parts

$28.955

760

$30.162

-

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$28.955

Northwest PG Solutions

USA . 2,334 parts In-Stock

1+ parts

$33.178

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2,334

$33.178

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Kepictronics

USA . 100,000 parts In-Stock

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SupplyDigital Components

Austria . 6,792 parts In-Stock

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6,792

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Problanco Electronics

Mexico . 2,599 parts In-Stock

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2,599

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TANS Electronics

Latvia . 2,325 parts In-Stock

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2,325

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Assy Fe

Spain . 2,197 parts In-Stock

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2,197

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Kulean Microsystems

USA . 1,077 parts In-Stock

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1,077

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UHIMA Technologies

Türkiye . 960 parts In-Stock

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960

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT)? Look no further than the BUL147 from Onsemi. With a maximum power dissipation of 125W and a maximum collector-emitter voltage of 400V, this NPN transistor is perfect for switching applications. Its durable plastic/epoxy package body material ensures longevity, while its single configuration makes it easy to use. Whether you're in the automotive, industrial, or consumer electronics industry, the BUL147 offers exceptional value and performance. Upgrade your designs today with this top-notch transistor from Onsemi!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits for their high current gain and fast switching capabilities.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals are durable and provide mechanical stability during soldering.

Maximum Power Dissipation: 125 W

High power dissipation capability allows for handling of large power loads.

Package Style (Meter): FLANGE MOUNT

Flange mount style provides secure mounting options for the transistor.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain ensures stable and reliable amplification in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures stable performance even in demanding conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating allows for handling high voltage circuits.

Transistor Element Material: SILICON

Silicon material provides good thermal stability and reliability.

Maximum Collector Current (IC): 8 A

High collector current rating allows for handling of large current flows.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and conductivity.

Terminal Position: SINGLE

Single terminal position simplifies circuit connection.

Case Connection: COLLECTOR

Collector case connection provides efficient heat dissipation.

Peak Reflow Temperature °C: 235

High peak reflow temperature ensures reliable soldering during manufacturing.

Nominal Transition Frequency (fT): 14 MHz

High nominal transition frequency allows for efficient switching in high frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL147 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

8 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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