Loading...

BUL146BD

Onsemi

BUL146BD by Onsemi

BUL146BD by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 6A, and hFE of 8. Ideal for switching applications due to its single configuration and high transition frequency of 14MHz. The transistor's through-hole terminals and flange mount style make it suitable for various power electronics designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,079 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,079

-

-

-

-

Vyrian

USA . 470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

470

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Problanco Electronics

Mexico . 7,935 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,935

-

-

-

-

SupplyDigital Components

Austria . 4,991 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,991

-

-

-

-

Kulean Microsystems

USA . 2,620 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,620

-

-

-

-

Northwest PG Solutions

USA . 1,270 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,270

-

-

-

-

UHIMA Technologies

Türkiye . 828 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

828

-

-

-

-

Corphita

USA . 324 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

324

-

-

-

-

Native Components

USA . 303 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

303

-

-

-

-

TANS Electronics

Latvia . 220 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

220

-

-

-

-

Corohmni

South Africa . 161 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

161

-

-

-

-

Overview

Upgrade your power switching applications with the BUL146BD by Onsemi. This NPN Power Bipolar Junction Transistor offers reliability and efficiency, thanks to its high DC current gain and maximum collector current of 6A. Its flange mount package ensures easy installation, while its durable plastic/epoxy body guarantees long-lasting performance. Whether you're working on industrial machinery or automotive electronics, this transistor provides the value and benefits you need for smooth operation and optimal functionality. Trust Onsemi for quality components that deliver results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in switching applications and offer high efficiency.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and soldering onto circuit boards.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and stable connections, ideal for various mounting options.

No. of Terminals: 3

Three terminals provide the necessary connections for proper functioning in a circuit.

Package Style (Meter): FLANGE MOUNT

Flange mount package style allows for easy and secure mounting on different surfaces.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain of 8 ensures efficient amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150 °C allows for reliable performance in various conditions.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage of 400V enables handling of higher voltages in the circuit.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability in electronic components.

Maximum Collector Current (IC): 6 A

High maximum collector current of 6A allows for handling larger currents in the circuit.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and ensures a secure connection with other components.

Terminal Position: SINGLE

Single terminal position simplifies circuit design and helps in easy installation.

Case Connection: COLLECTOR

Case connection at collector facilitates easy circuit connections and improves performance.

Nominal Transition Frequency (fT): 14 MHz

High nominal transition frequency of 14MHz indicates fast switching capabilities and high-frequency performance.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146BD attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146BD Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20