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BUL146BV

Onsemi

BUL146BV by Onsemi

BUL146BV by Onsemi is a NPN Power BJT with max. Vce of 400V and Ic of 6A. It has hFE of min. 8 and fT of 14MHz, ideal for switching applications in electronics due to its high voltage and current capabilities. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 983 parts In-Stock

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Vyrian

USA . 515 parts In-Stock

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TANS Electronics

Latvia . 6,125 parts In-Stock

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Kulean Microsystems

USA . 4,133 parts In-Stock

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Corphita

USA . 2,419 parts In-Stock

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Problanco Electronics

Mexico . 2,192 parts In-Stock

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Northwest PG Solutions

USA . 1,491 parts In-Stock

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Native Components

USA . 782 parts In-Stock

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UHIMA Technologies

Türkiye . 659 parts In-Stock

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SupplyDigital Components

Austria . 655 parts In-Stock

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Corohmni

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Overview

Unleash the power of innovation with the BUL146BV by Onsemi. As a leader in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors (BJT) like no other. Designed for switching applications, this NPN transistor offers unparalleled performance and reliability. With a maximum collector-emitter voltage of 400V and a maximum collector current of 6A, the BUL146BV is a game-changer in the world of electronics. Whether you're looking to enhance your designs or streamline your processes, this transistor is the perfect solution. Trust Onsemi to provide you with the tools you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the transistor, making it durable and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile and suitable for a wide range of electronic circuits.

Configuration: SINGLE

Single configuration transistors are easy to use and integrate into circuit designs, making this transistor user-friendly.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast and reliable performance when switching high current loads.

Package Shape: RECTANGULAR

The rectangular shape of the package makes it easy to mount and solder onto a circuit board, simplifying the assembly process.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a strong and reliable connection to the circuit board, reducing the risk of mechanical failure.

No. of Terminals: 3

Having only 3 terminals makes it easier to identify and connect the transistor in the circuit, reducing the chances of errors during assembly.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers additional stability and support when mounting the transistor, ensuring it stays securely in place.

Minimum DC Current Gain (hFE): 8

A higher minimum DC current gain ensures consistent and predictable transistor performance, making it easier to design circuits with reliable operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, making it suitable for a variety of applications.

Maximum Collector-Emitter Voltage: 400 V

The high maximum collector-emitter voltage rating allows the transistor to handle higher voltage loads, expanding its range of possible uses in electronic circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, ensuring stable operation over a wide range of conditions.

Maximum Collector Current (IC): 6 A

With a high maximum collector current rating, this transistor can handle significant current loads, making it suitable for power applications.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides a good solderable surface, ensuring a strong and reliable connection to the circuit board.

Terminal Position: SINGLE

Having a single terminal position simplifies the connection process and reduces the risk of errors during assembly.

Case Connection: COLLECTOR

The collector case connection allows for efficient heat dissipation, helping to maintain optimal operating temperatures for the transistor.

Nominal Transition Frequency (fT): 14 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for applications requiring fast switching speeds.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146BV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146BV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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