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BUL146AN

Onsemi

BUL146AN by Onsemi

BUL146AN by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 6A, and hFE of 8. Ideal for switching applications, it operates up to 150 °C with a fT of 14MHz. The transistor comes in a plastic/epoxy package with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,449 parts In-Stock

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Digiode

USA . 1,072 parts In-Stock

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TANS Electronics

Latvia . 7,687 parts In-Stock

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Problanco Electronics

Mexico . 7,025 parts In-Stock

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Kulean Microsystems

USA . 6,129 parts In-Stock

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SupplyDigital Components

Austria . 2,452 parts In-Stock

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Northwest PG Solutions

USA . 2,221 parts In-Stock

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Native Components

USA . 874 parts In-Stock

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Corphita

USA . 825 parts In-Stock

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UHIMA Technologies

Türkiye . 752 parts In-Stock

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Corohmni

South Africa . 402 parts In-Stock

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Overview

Experience top-notch quality and reliability with the BUL146AN power bipolar junction transistor from Onsemi. As a trusted manufacturer in the industry, Onsemi delivers cutting-edge technology for various applications, including switching. This NPN transistor offers exceptional value with its high collector-emitter voltage, maximum operating temperature, and nominal transition frequency. Trust in the performance and efficiency of the BUL146AN for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that provides good protection for the transistor, ensuring longevity and reliability.

Polarity or Channel Type: NPN

Common and versatile type of bipolar junction transistor that allows for easy integration into a wide range of circuits.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to use and less prone to errors.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring optimal performance and efficiency in such scenarios.

Package Shape: RECTANGULAR

Compact shape that allows for efficient use of space in circuit layouts.

Terminal Form: THROUGH-HOLE

Traditional and reliable terminal form that is easy to solder and provides secure connections.

Maximum Operating Temperature: 150 °C

High temperature tolerance allows for use in a wide range of environments without risking damage or malfunction.

Maximum Collector-Emitter Voltage: 400 V

High voltage capability makes this transistor suitable for applications that require handling of significant voltage levels.

Maximum Collector Current (IC): 6 A

High current handling capacity enables the transistor to support demanding loads without overheating or failing.

Nominal Transition Frequency (fT): 14 MHz

Fast switching speeds at high frequencies make this transistor ideal for applications where rapid signal processing is needed.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AN attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AN Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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