Loading...

BUL146AK

Onsemi

BUL146AK by Onsemi

BUL146AK by Onsemi is a NPN Power BJT with max. collector-emitter voltage of 400V, ideal for switching applications. Featuring a min. DC current gain of 8 and max. collector current of 6A, it operates up to 150 °C. This transistor in a rectangular package with through-hole terminals suits flange mount configurations efficiently.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 510 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

510

-

-

-

-

Digiode

USA . 183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

183

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,892 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,892

-

-

-

-

Problanco Electronics

Mexico . 5,132 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,132

-

-

-

-

Northwest PG Solutions

USA . 1,446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,446

-

-

-

-

Corphita

USA . 1,185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,185

-

-

-

-

UHIMA Technologies

Türkiye . 598 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

598

-

-

-

-

Native Components

USA . 543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

543

-

-

-

-

Kulean Microsystems

USA . 372 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

372

-

-

-

-

Corohmni

South Africa . 368 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

368

-

-

-

-

TANS Electronics

Latvia . 22 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

22

-

-

-

-

Overview

Unlock the power of innovation with the BUL146AK by Onsemi. Designed with precision and quality in mind, this Power Bipolar Junction Transistor (BJT) delivers unmatched performance for switching applications. Onsemi's reputation for excellence ensures reliability and durability, making this NPN transistor a standout choice for a wide range of projects. Whether you're looking to enhance efficiency or boost productivity, the BUL146AK offers unparalleled value and benefits that will elevate your designs to new heights. Experience the difference with Onsemi today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight and durable, making the transistor easy to handle and resistant to damage during installation.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications and provide fast switching speeds with low saturation voltage.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easier to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers efficient performance in turning on and off electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance or reliability.

Maximum Collector-Emitter Voltage: 400 V

The high maximum voltage rating allows the transistor to handle high voltages, making it suitable for a wide range of applications.

Maximum Collector Current (IC): 6 A

With a high collector current rating, this transistor can handle large amounts of current flow, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 14 MHz

The high transition frequency enables fast switching speeds and high-frequency operation, making this transistor ideal for high-speed applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AK attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AK Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20