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BUL146BU

Onsemi

BUL146BU by Onsemi

BUL146BU by Onsemi is a NPN Power BJT with max. VCE of 400V, IC of 6A, and hFE min. of 8. Ideal for switching applications due to its single configuration and flange mount package style. Operating up to 150 °C, it features silicon element material and a rectangular package shape for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,771 parts In-Stock

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Digiode

USA . 350 parts In-Stock

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Problanco Electronics

Mexico . 6,995 parts In-Stock

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Kulean Microsystems

USA . 5,973 parts In-Stock

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SupplyDigital Components

Austria . 5,612 parts In-Stock

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Corphita

USA . 743 parts In-Stock

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Northwest PG Solutions

USA . 484 parts In-Stock

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TANS Electronics

Latvia . 451 parts In-Stock

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Corohmni

South Africa . 329 parts In-Stock

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Native Components

USA . 190 parts In-Stock

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UHIMA Technologies

Türkiye . 125 parts In-Stock

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Overview

Unleash the power of the BUL146BU by Onsemi, a top-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by Onsemi, known for their excellence in producing reliable electronic components, this NPN transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 6A. With a minimum DC current gain of 8 and a nominal transition frequency of 14MHz, this transistor delivers exceptional performance. Whether you're working on industrial automation, power supplies, or motor control applications, the BUL146BU is your go-to solution for efficient and reliable performance. Experience the value and benefits that Onsemi products bring to your projects with the BUL146BU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various application environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to use in electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Compact and space-saving design allowing for easy mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Facilitates easy installation and soldering onto circuit boards, providing a secure electrical connection.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for demanding industrial applications.

Nominal Transition Frequency (fT): 14 MHz

High transition frequency enables fast switching speeds and improved efficiency in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146BU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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