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BUL146AF

Onsemi

BUL146AF by Onsemi

BUL146AF by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 6A. It has a min. hFE of 8, ideal for switching applications due to its high collector current capacity and transition frequency of 14MHz. The transistor comes in a plastic/epoxy package with through-hole terminals, suitable for flange mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,355 parts In-Stock

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2,355

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Digiode

USA . 359 parts In-Stock

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359

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 362 parts In-Stock

1+ parts

$0.963

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362

$0.963

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Northwest PG Solutions

USA . 2,361 parts In-Stock

1+ parts

$1.060

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2,361

$1.060

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TANS Electronics

Latvia . 4,694 parts In-Stock

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4,694

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Kulean Microsystems

USA . 3,136 parts In-Stock

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3,136

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SupplyDigital Components

Austria . 1,031 parts In-Stock

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1,031

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Corphita

USA . 1,007 parts In-Stock

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1,007

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Problanco Electronics

Mexico . 455 parts In-Stock

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455

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Corohmni

South Africa . 450 parts In-Stock

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450

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Overview

Unleash the power of innovation with the BUL146AF by Onsemi. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers exceptional performance in switching applications. Its NPN configuration and high-quality SILICON transistor element ensure reliability and efficiency. From its durable plastic/epoxy body to its flange mount package style, this transistor is designed to exceed expectations. Experience seamless operation with a maximum collector-emitter voltage of 400V and a maximum collector current of 6A. Elevate your projects with the BUL146AF and discover the next level of excellence in electronic components.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan and reliable performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering low noise and high efficiency.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, offering fast switching speeds and high efficiency.

Package Shape: RECTANGULAR

Allows for easy mounting and installation in electronic devices or circuits.

Terminal Form: THROUGH-HOLE

Enables easy and secure soldering onto circuit boards, ensuring a stable connection.

No. of Terminals: 3

Simplifies the connection process and reduces the chance of wiring errors.

Package Style (Meter): FLANGE MOUNT

Enables convenient mounting and provides stability in various applications.

Minimum DC Current Gain (hFE): 8

Provides consistent and reliable amplification of input signals.

Maximum Collector-Emitter Voltage: 400 V

Allows for higher voltage operation, suitable for a wide range of applications.

Transistor Element Material: SILICON

Provides high performance and reliability, ideal for demanding applications.

Maximum Collector Current (IC): 6 A

Allows for high current operation, making it suitable for power applications.

Terminal Finish: TIN LEAD

Ensures good electrical conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplifies the connection process and reduces the risk of wiring errors.

Case Connection: COLLECTOR

Provides easy access to the collector terminal for convenient connection in circuits.

Nominal Transition Frequency (fT): 14 MHz

Indicates the maximum frequency at which the transistor can reliably switch signals.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AF attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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