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BUL146F

Onsemi

BUL146F by Onsemi

BUL146F by Onsemi is a NPN Power BJT with 40W power dissipation, 400V max. collector-emitter voltage, and 6A max. collector current. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The transistor comes in a rectangular package with through-hole terminals for easy mounting.

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Vyrian

USA . 1,301 parts In-Stock

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Digiode

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MISTER SPROCKETS

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Pegasus Components GmbH

Germany . 150 parts In-Stock

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LWI Electronics Inc

India . 46 parts In-Stock

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ComSIT Distribution GmbH

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Component Stockers USA

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Kepictronics

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TANS Electronics

Latvia . 7,296 parts In-Stock

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Problanco Electronics

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A-Z Elektronik GmbH

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Kulean Microsystems

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Alle Elektronik GmbH

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Northwest PG Solutions

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Corohmni

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Overview

Unleash the power of innovation with the BUL146F by Onsemi! Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. With a maximum collector-emitter voltage of 400V and a maximum operating temperature of 150 °C, this NPN transistor is a game-changer in the industry. Its flange mount package style ensures easy installation, while its high DC current gain guarantees efficiency. Trust Onsemi's reputation for quality and reliability to bring your projects to life with the BUL146F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and protects the transistor from external factors, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN transistors are commonly used in digital electronics and provide high performance in switching applications.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and makes the transistor easy to integrate into various systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, making it efficient and reliable in controlling electrical currents.

Maximum Power Dissipation (Abs): 40 W

With a high power dissipation capacity, this transistor can handle large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage levels, making it suitable for applications where high voltage switching is required.

Maximum Collector Current (IC): 6 A

Capable of handling high currents, making it suitable for applications that require a lot of power.

Nominal Transition Frequency (fT): 14 MHz

Provides high frequency performance, making it suitable for applications where fast switching speeds are necessary.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146F attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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