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BUL146AU

Onsemi

BUL146AU by Onsemi

BUL146AU by Onsemi is a NPN Power BJT with max. Vce of 400V, Ic of 6A, and hFE of 8. Ideal for switching applications due to its single configuration and flange mount package style. Operating up to 150 °C, it features silicon element material in a plastic/epoxy body for through-hole mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,848 parts In-Stock

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Digiode

USA . 635 parts In-Stock

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635

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Native Components

USA . 934 parts In-Stock

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$0.713

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934

$0.713

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Northwest PG Solutions

USA . 466 parts In-Stock

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$0.784

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466

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Problanco Electronics

Mexico . 7,053 parts In-Stock

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7,053

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TANS Electronics

Latvia . 4,790 parts In-Stock

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4,790

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SupplyDigital Components

Austria . 4,708 parts In-Stock

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Kulean Microsystems

USA . 3,386 parts In-Stock

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Corphita

USA . 2,041 parts In-Stock

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UHIMA Technologies

Türkiye . 856 parts In-Stock

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Corohmni

South Africa . 201 parts In-Stock

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Overview

Looking for a reliable and efficient power transistor? Look no further than the BUL146AU by Onsemi. With its high-quality construction and trusted manufacturer, this NPN transistor is perfect for switching applications. Its flange mount package and single configuration make it easy to use, while its maximum collector-emitter voltage of 400V and maximum collector current of 6A ensure optimal performance. Trust Onsemi to deliver the power you need with the BUL146AU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation properties and mechanical strength, making the transistor durable and reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits due to their high input impedance and fast switching speeds.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to integrate into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and efficient use of board space in electronic circuits.

Terminal Form: THROUGH-HOLE

Enables convenient manual soldering and secure connections to PCBs.

No. of Terminals: 3

Simplifies circuit connections and reduces complexity in wiring arrangements.

Maximum Operating Temperature: 150 °C

Can operate efficiently in a wide range of temperatures, making it suitable for various environments.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage applications, making it versatile for different power requirements.

Maximum Collector Current (IC): 6 A

Can handle relatively high current levels, allowing for power switching applications.

Nominal Transition Frequency (fT): 14 MHz

Indicates high-speed switching capabilities, making it suitable for applications that require fast response times.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AU attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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