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BUL146AJ

Onsemi

BUL146AJ by Onsemi

BUL146AJ by Onsemi is a NPN Power BJT with max. Vce of 400V and max. Ic of 6A. With hFE of min. 8, it's ideal for switching applications in various industries due to its high transition frequency of 14MHz and through-hole terminal form.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,558 parts In-Stock

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Vyrian

USA . 1,494 parts In-Stock

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1,494

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Kulean Microsystems

USA . 3,870 parts In-Stock

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3,870

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Problanco Electronics

Mexico . 2,604 parts In-Stock

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Corphita

USA . 2,339 parts In-Stock

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Northwest PG Solutions

USA . 2,036 parts In-Stock

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2,036

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TANS Electronics

Latvia . 1,612 parts In-Stock

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SupplyDigital Components

Austria . 1,470 parts In-Stock

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1,470

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UHIMA Technologies

Türkiye . 672 parts In-Stock

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Native Components

USA . 272 parts In-Stock

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Corohmni

South Africa . 252 parts In-Stock

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Overview

Enhance your power management solutions with the BUL146AJ by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that guarantee reliability and efficiency. Ideal for switching applications, this NPN transistor offers a maximum collector-emitter voltage of 400V and a maximum collector current of 6A. With a minimum DC current gain of 8 and a nominal transition frequency of 14 MHz, the BUL146AJ provides exceptional performance in a variety of electronic devices. Upgrade your projects with this high-value component and experience the benefits of Onsemi's cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

Suitable for a wide range of applications including amplification and switching.

Configuration: SINGLE

Easy to use and integrate in electronic circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance.

Package Shape: RECTANGULAR

Allows for easy mounting and installation in electronic devices.

Terminal Form: THROUGH-HOLE

Simplifies the soldering process and ensures secure connections.

No. of Terminals: 3

Provides necessary connections for proper operation of the transistor.

Package Style (Meter): FLANGE MOUNT

Enables easy installation and secure mounting of the transistor in a circuit.

Minimum DC Current Gain (hFE): 8

Ensures proper amplification and performance in various applications.

Maximum Collector-Emitter Voltage: 400 V

Allows for operation in higher voltage circuits, increasing the versatility of the transistor.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 6 A

Capable of handling high current loads, suitable for many applications.

Terminal Finish: TIN LEAD

Provides good conductivity and corrosion resistance for the terminals.

Terminal Position: SINGLE

Simplifies the connection and mounting process in electronic circuits.

Case Connection: COLLECTOR

Clearly defines the connection point for the collector terminal.

Nominal Transition Frequency (fT): 14 MHz

Indicates the maximum frequency at which the transistor can effectively operate, suitable for various applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL146AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL146AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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