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BUL3P5

STMicroelectronics

BUL3P5 by STMicroelectronics

BUL3P5 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 60W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient control in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,796 parts In-Stock

1+ parts

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3,796

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Anansix

USA . 2,450 parts In-Stock

1+ parts

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2,450

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Vyrian

USA . 2,091 parts In-Stock

1+ parts

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2,091

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Cyclops Electronics Ltd

UK . 70 parts In-Stock

1+ parts

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70

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 566 parts In-Stock

1+ parts

$0.236

100+ parts

-

1k+ parts

-

10k+ parts

$0.227

566

$0.236

-

-

$0.227

Northwest PG Solutions

USA . 1,197 parts In-Stock

1+ parts

$0.260

100+ parts

-

1k+ parts

-

10k+ parts

$0.229

1,197

$0.260

-

-

$0.229

IDEA Electronic Components Group

UK . 2,171 parts In-Stock

1+ parts

$0.405

100+ parts

-

1k+ parts

$0.364

10k+ parts

-

2,171

$0.405

-

$0.364

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MKK Technologies

India . 2,045 parts In-Stock

1+ parts

$0.761

100+ parts

-

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2,045

$0.761

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DigiPath Technology Company

USA . 2,045 parts In-Stock

1+ parts

$0.761

100+ parts

-

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2,045

$0.761

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Advanced Electronics

New Zealand . 37 parts In-Stock

1+ parts

$1.003

100+ parts

$0.913

1k+ parts

$0.822

10k+ parts

-

37

$1.003

$0.913

$0.822

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Corohmni

South Africa . 42 parts In-Stock

1+ parts

$1.264

100+ parts

-

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42

$1.264

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AZTECH Wire

Italy . 652 parts In-Stock

1+ parts

$14.010

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652

$14.010

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 28,920 parts In-Stock

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28,920

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Alle Elektronik GmbH

Germany . 4,904 parts In-Stock

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4,904

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Corphita

USA . 2,235 parts In-Stock

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2,235

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Parana Technologies

USA . 2,214 parts In-Stock

1+ parts

-

100+ parts

$0.484

1k+ parts

-

10k+ parts

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2,214

-

$0.484

-

-

Overview

Unlock the potential of your projects with the BUL3P5 from STMicroelectronics, a leader in innovation and reliability. This PNP power transistor is perfect for switching applications, offering exceptional performance and durability. With a robust design that withstands high temperatures and power demands, it ensures efficiency in your electronic circuits. Trust in STMicroelectronics’ legacy of quality to elevate your designs and drive success in various applications, from industrial systems to consumer electronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers excellent durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it is ideal for applications requiring high current gain and efficient switching in circuits.

Configuration: SINGLE

The single configuration simplifies design and integration into electronic circuits, providing a compact solution for power applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast and reliable performance in controlling power to loads.

Package Shape: RECTANGULAR

The rectangular package shape aids in better space utilization on PCBs, allowing for efficient layout and assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides robust mechanical support and reliable connectivity, particularly in high-power applications.

No. of Terminals: 3

Having three terminals facilitates easy integration into circuit designs while ensuring the necessary connections for operation.

Maximum Power Dissipation (Abs): 60 W

With a maximum power dissipation of 60 W, this transistor can handle substantial power levels, making it suitable for high-demand applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides enhanced stability and heat dissipation, which is critical for high-power applications.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures efficient amplification, allowing for effective signal processing in various circuits.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature rating allows the transistor to perform reliably in demanding thermal environments.

Maximum Collector-Emitter Voltage: 400 V

With a collector-emitter voltage rating of 400 V, this transistor can be used in high-voltage applications, ensuring versatility.

Transistor Element Material: SILICON

Silicon as the transistor element material provides good thermal conductivity and reliability, which are essential for consistent performance.

Maximum Collector Current (IC): 3 A

The capability of handling a maximum collector current of 3 A makes this transistor suitable for moderate to high current applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish offers good solderability and corrosion resistance, ensuring reliable connections over time.

Terminal Position: SINGLE

Single terminal position simplifies the design and manufacturing process, facilitating easier PCB layout and assembly.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL3P5 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL3P5 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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