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BUL382D

STMicroelectronics

BUL382D by STMicroelectronics

BUL382D by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and can operate up to 150 °C. The through-hole package has a flange mount style with tin-lead finish.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,899 parts In-Stock

1+ parts

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4,899

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Digiode

USA . 3,130 parts In-Stock

1+ parts

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3,130

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Anansix

USA . 1,295 parts In-Stock

1+ parts

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1,295

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,292 parts In-Stock

1+ parts

$1.404

100+ parts

-

1k+ parts

$1.264

10k+ parts

-

2,292

$1.404

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$1.264

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MKK Technologies

India . 2,377 parts In-Stock

1+ parts

$2.640

100+ parts

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2,377

$2.640

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DigiPath Technology Company

USA . 2,377 parts In-Stock

1+ parts

$2.640

100+ parts

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2,377

$2.640

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Native Components

USA . 589 parts In-Stock

1+ parts

$4,215.138

100+ parts

$4,130.835

1k+ parts

$4,088.684

10k+ parts

$4,046.532

589

$4,215.138

$4,130.835

$4,088.684

$4,046.532

Northwest PG Solutions

USA . 1,266 parts In-Stock

1+ parts

$4,636.651

100+ parts

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1,266

$4,636.651

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Corphita

USA . 2,183 parts In-Stock

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2,183

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Parana Technologies

USA . 540 parts In-Stock

1+ parts

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$1.679

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540

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$1.679

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Overview

Enhance your electronic projects with the BUL382D Power Bipolar Junction Transistor from STMicroelectronics. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 70W, this NPN transistor is ideal for switching applications. The single configuration with built-in diode offers convenience and efficiency. Trust in the quality and reliability of STMicroelectronics to bring value and benefits to your designs. Upgrade your projects today with the BUL382D and experience enhanced performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications, offering fast switching speeds and high current capabilities.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching and protection against reverse current flow.

Transistor Application: SWITCHING

Designed specifically for switching operations, providing reliable performance in such applications.

Maximum VCEsat: 1.1 V

Low VCEsat indicates minimal power loss during operation, contributing to energy efficiency.

Package Shape: RECTANGULAR

Rectangular shape allows for easy mounting and integration into various electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate soldering and ensure secure connections on PCBs.

No. of Terminals: 3

Simple 3-terminal design for straightforward wiring and connection.

Maximum Power Dissipation (Abs): 70 W

High power dissipation capability allows the transistor to handle demanding loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style enables easy and secure installation in various equipment.

Maximum Power Dissipation Ambient: 70 W

Capable of dissipating heat effectively in ambient conditions, ensuring reliable performance in different environments.

Minimum DC Current Gain (hFE): 8

Minimum DC current gain of 8 ensures proper amplification and signal control in circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for operation in a wide range of temperature conditions.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating of 400V provides flexibility in voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance, reliability, and efficiency in transistor operations.

Maximum Collector Current (IC): 5 A

High maximum collector current rating allows for handling high current loads without damaging the transistor.

Maximum Turn Off Time (toff): 3800 ns

Fast turn-off time of 3800ns ensures rapid switching operations, suitable for time-critical applications.

Terminal Finish: TIN LEAD

Tin lead finish on terminals provides corrosion resistance and enhances solderability.

Terminal Position: SINGLE

Single terminal position simplifies installation and ensures proper alignment in circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL382D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3800 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL382D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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