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BUL381D

STMicroelectronics

BUL381D by STMicroelectronics

BUL381D by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 1.1V VCEsat. Ideal for switching applications, it has a built-in diode and can handle up to 70W power dissipation. With a max operating temperature of 150 °C, this transistor is designed for high-power requirements in various electronic circuits.

Median Price

$1.090

Lifecycle Status

Suppliers In-Stock

16

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 274 parts In-Stock

1+ parts

$1.090

100+ parts

$0.926

1k+ parts

$0.910

10k+ parts

$0.893

274

$1.090

$0.926

$0.910

$0.893

Farnell

UK . 274 parts In-Stock

1+ parts

$1.510

100+ parts

$0.481

1k+ parts

-

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274

$1.510

$0.481

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Chip1Stop

Japan . 1,700 parts In-Stock

1+ parts

$4.060

100+ parts

$0.976

1k+ parts

$0.632

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-

1,700

$4.060

$0.976

$0.632

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Arrow

USA . 1,700 parts In-Stock

1+ parts

-

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$0.726

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1,700

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-

$0.726

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Verical

USA . 1,000 parts In-Stock

1+ parts

-

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$0.724

10k+ parts

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1,000

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$0.724

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Distributors (In-Stock)

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Digiode

USA . 2,738 parts In-Stock

1+ parts

$0.479

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2,738

$0.479

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Vyrian

USA . 4,055 parts In-Stock

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$0.504

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4,055

$0.504

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Forefront Electronics and Design

USA . 79 parts In-Stock

1+ parts

$4.900

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79

$4.900

-

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ComSIT Distribution GmbH

Germany . 12,300 parts In-Stock

1+ parts

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12,300

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Zilex Electronics Inc.

Canada . 8,020 parts In-Stock

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8,020

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R&J Components

USA . 763 parts In-Stock

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763

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Anansix

USA . 364 parts In-Stock

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364

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Bristol Electronics

USA . 200 parts In-Stock

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200

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LIBRA Elektronik GmbH

Germany . 49 parts In-Stock

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49

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LittleDiode

UK . 4 parts In-Stock

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4

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Fibra_Brandt Electronic GMBH

Germany . 1 parts In-Stock

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1

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Distributors (Availability)

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Continental Prestige Electronics

USA . 308 parts In-Stock

1+ parts

$0.393

100+ parts

-

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308

$0.393

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Corphita

USA . 1,453 parts In-Stock

1+ parts

$0.454

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1,453

$0.454

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IDEA Electronic Components Group

UK . 841 parts In-Stock

1+ parts

$1.410

100+ parts

-

1k+ parts

$1.269

10k+ parts

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841

$1.410

-

$1.269

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MKK Technologies

India . 1,058 parts In-Stock

1+ parts

$2.652

100+ parts

-

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1,058

$2.652

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DigiPath Technology Company

USA . 1,058 parts In-Stock

1+ parts

$2.652

100+ parts

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1,058

$2.652

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Native Components

USA . 999 parts In-Stock

1+ parts

$4,367.485

100+ parts

$4,280.135

1k+ parts

$4,236.460

10k+ parts

$4,192.785

999

$4,367.485

$4,280.135

$4,236.460

$4,192.785

Northwest PG Solutions

USA . 2,193 parts In-Stock

1+ parts

$4,804.233

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2,193

$4,804.233

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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Kepictronics

USA . 13,000 parts In-Stock

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Perfect Parts

USA . 9,353 parts In-Stock

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Parana Technologies

USA . 2,283 parts In-Stock

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$1.686

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$1.686

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A-Z Elektronik GmbH

Germany . 1,709 parts In-Stock

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GreenTree Electronics

Israel . 1,550 parts In-Stock

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Authorized Procurement Solutions

USA . 1,550 parts In-Stock

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1,550

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Glotronic Ltd.

UK . 1,360 parts In-Stock

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1,360

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Alle Elektronik GmbH

Germany . 1,139 parts In-Stock

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1,139

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Assy Fe

Spain . 24 parts In-Stock

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24

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Overview

Experience the exceptional quality and reliability of the BUL381D Power Bipolar Junction Transistor from STMicroelectronics. With a maximum VCEsat of 1.1V, this NPN transistor is ideal for switching applications, offering a maximum power dissipation of 70W. Its built-in diode and high DC current gain ensure optimal performance and efficiency. Whether you're designing power supplies, inverters, or motor control systems, the BUL381D delivers the value and benefits you need for your next project. Trust STMicroelectronics for superior technology that empowers innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for reverse current protection, adding an extra layer of safety to the circuit.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient operation in electronic circuits.

Maximum VCEsat: 1.1 V

Low saturation voltage helps in reducing power losses and improving efficiency.

Package Shape: RECTANGULAR

Rectangular shape makes it easy to mount and integrate into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and ease of soldering.

Maximum Power Dissipation (Abs): 70 W

High power dissipation rating allows for reliable performance in demanding applications.

Maximum Collector-Emitter Voltage: 400 V

High collector-emitter voltage rating ensures compatibility with a wide range of circuits.

Maximum Collector Current (IC): 5 A

High collector current capability enables the transistor to handle larger loads.

Minimum DC Current Gain (hFE): 8

Higher DC current gain ensures amplification and accurate signal control.

Maximum Operating Temperature: 150 °C

Wide operating temperature range makes it suitable for various environmental conditions.

Maximum Turn Off Time (toff): 3300 ns

Fast turn-off time contributes to improved switching speeds and overall circuit performance.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides corrosion resistance and enhances solderability.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection processes.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL381D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3300 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL381D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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