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BUL310

STMicroelectronics

BUL310 by STMicroelectronics

BUL310 by STMicroelectronics is a NPN Power BJT transistor with 500V VCE, 5A IC, and 1.1V VCEsat. Ideal for switching applications, it has a max power dissipation of 75W and operates up to 150 °C. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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Digiode

USA . 4,262 parts In-Stock

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Vyrian

USA . 3,476 parts In-Stock

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3,476

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Anansix

USA . 635 parts In-Stock

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635

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ComSIT Distribution GmbH

Germany . 550 parts In-Stock

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550

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Fibra_Brandt Electronic GMBH

Germany . 140 parts In-Stock

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140

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ACDS - Activité Composants Distribution Service

France . 105 parts In-Stock

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105

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LittleDiode

UK . 49 parts In-Stock

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49

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GES GmbH

Germany . 19 parts In-Stock

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19

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Goldney Electronics S.L.

Spain . 5 parts In-Stock

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Donberg Electronics Ltd

Ireland . 2 parts In-Stock

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Corel Iberica Componentes, S.L.

Spain . 1 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 216 parts In-Stock

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$1.183

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$1.065

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216

$1.183

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$1.065

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MKK Technologies

India . 643 parts In-Stock

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$2.225

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DigiPath Technology Company

USA . 643 parts In-Stock

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$2.225

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643

$2.225

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 7,970 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Corphita

USA . 2,868 parts In-Stock

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Perfect Parts

USA . 979 parts In-Stock

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Robosynatics

Brazil . 900 parts In-Stock

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900

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Lucentia Tech

USA . 900 parts In-Stock

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$1.372

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$1.270

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$1.270

900

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$1.372

$1.270

$1.270

Northwest PG Solutions

USA . 672 parts In-Stock

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Parana Technologies

USA . 580 parts In-Stock

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$1.415

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Native Components

USA . 452 parts In-Stock

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Assy Fe

Spain . 1 parts In-Stock

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Overview

Looking for a reliable power bipolar junction transistor to enhance your electronic projects? Look no further than the BUL310 by STMicroelectronics. With a maximum collector-emitter voltage of 500V and a maximum collector current of 5A, this NPN transistor is perfect for switching applications. Its high-quality construction and superior performance make it a valuable addition to any project. Trust STMicroelectronics to deliver top-notch components that exceed expectations. Upgrade your designs with the BUL310 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in design.

Configuration: SINGLE

Simplified setup and operation with a single transistor configuration.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such scenarios.

Maximum VCEsat: 1.1 V

Low VCEsat improves efficiency and reduces power loss in switching operations.

Package Shape: RECTANGULAR

Rectangular shape allows for easy and secure mounting in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer stability and reliability in circuit connections.

Maximum Power Dissipation (Abs): 75 W

High power dissipation capability allows for handling of heavy loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides a secure and stable mounting option for the transistor.

Maximum Power Dissipation Ambient: 75 W

The transistor can dissipate heat efficiently, even in high ambient temperature environments.

Minimum DC Current Gain (hFE): 6

A minimum DC current gain of 6 ensures proper amplification and switching performance.

Maximum Operating Temperature: 150 °C

Capable of operating in high-temperature environments, making it suitable for various applications.

Maximum Collector-Emitter Voltage: 500 V

With a high collector-emitter voltage rating, this transistor can handle high voltage applications.

Transistor Element Material: SILICON

Silicon-based transistors offer good performance characteristics and reliability in circuit operation.

Maximum Collector Current (IC): 5 A

Capable of handling high collector current, making it suitable for power circuits.

Maximum Turn Off Time (toff): 2060 ns

Fast turn-off time ensures quick switching operations, improving overall efficiency.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides corrosion resistance and ensures reliable connections.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL310 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

6

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

75 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2060 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL310 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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