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BUL312FP

STMicroelectronics

BUL312FP by STMicroelectronics

BUL312FP by STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 500 V, a power dissipation of 36 W, and operates at up to 150 °C. Ideal for high-power circuits, it ensures reliable performance in demanding environments.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,567 parts In-Stock

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2,567

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Vyrian

USA . 176 parts In-Stock

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176

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Digiode

USA . 115 parts In-Stock

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115

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,409 parts In-Stock

1+ parts

$1.553

100+ parts

-

1k+ parts

$1.398

10k+ parts

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1,409

$1.553

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$1.398

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MKK Technologies

India . 1,124 parts In-Stock

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$2.920

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$2.920

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DigiPath Technology Company

USA . 1,124 parts In-Stock

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$2.920

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$2.920

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Andel Nordic

Denmark . 1,074 parts In-Stock

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$9.879

100+ parts

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$9.484

10k+ parts

$9.484

1,074

$9.879

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$9.484

$9.484

Component Stockers USA

USA . 362 parts In-Stock

1+ parts

$99.990

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362

$99.990

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Native Components

USA . 703 parts In-Stock

1+ parts

$2,090.760

100+ parts

$2,048.945

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$2,028.037

10k+ parts

$2,007.130

703

$2,090.760

$2,048.945

$2,028.037

$2,007.130

Northwest PG Solutions

USA . 1,124 parts In-Stock

1+ parts

$2,299.836

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$2,299.836

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Corphita

USA . 4,219 parts In-Stock

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Parana Technologies

USA . 2,224 parts In-Stock

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$1.857

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$1.857

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Assy Fe

Spain . 4 parts In-Stock

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Overview

Unlock the power of reliable performance with the BUL312FP from STMicroelectronics, a leader in semiconductor innovation. This robust NPN bipolar transistor excels in switching applications, ensuring efficient operations in various electronic designs. Crafted with precision and quality materials, it delivers exceptional durability and high-temperature operation up to 150 °C. Choose BUL312FP for unparalleled reliability and performance that elevates your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides excellent insulation and durability, making it suitable for various operating environments.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, offering fast operation and high reliability.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for users to work with.

Transistor Application: SWITCHING

Designed specifically for switching, this transistor enables efficient control of current, ideal for digital and power applications.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the PCB, allowing for efficient layout and design.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical support and are easier to solder, ensuring reliable connections.

No. of Terminals: 3

Three terminals allow for flexible circuit designs while maintaining a simple interface for set-up.

Maximum Power Dissipation (Abs): 36 W

A maximum power dissipation of 36 W allows the transistor to handle significant power, making it suitable for high-performance applications.

Package Style (Meter): FLANGE MOUNT

Flange mount design enhances stability and facilitates effective heat dissipation, crucial for high-power applications.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 allows for effective amplification, suitable for driving heavier loads.

Maximum Operating Temperature: 150 °C

Operating at high temperatures up to 150 °C ensures reliability under extreme conditions, enhancing longevity.

Maximum Collector-Emitter Voltage: 500 V

With a maximum voltage rating of 500 V, this transistor can effectively handle high voltage applications.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its excellent electrical properties, ensuring efficient operation.

Maximum Collector Current (IC): 5 A

A maximum collector current of 5 A allows this transistor to manage significant current, ideal for power applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, contributing to long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies design and is conducive to compact circuit layouts.

Case Connection: ISOLATED

Isolated case connections enhance safety and reduce the risk of malfunctions caused by unintended grounding.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL312FP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL312FP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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