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BUL382

STMicroelectronics

BUL382 by STMicroelectronics

BUL382 by STMicroelectronics is a NPN Power BJT transistor with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it has a single configuration and through-hole terminals. With hFE of 8 and max operating temp of 150 °C, it offers fast ton of 1000ns and toff of 3300ns.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,620 parts In-Stock

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1,620

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R&J Components

USA . 1,000 parts In-Stock

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1,000

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Vyrian

USA . 684 parts In-Stock

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684

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Resion

USA . 425 parts In-Stock

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425

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Anansix

USA . 300 parts In-Stock

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300

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ECAB

Sweden . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 19 parts In-Stock

1+ parts

$0.681

100+ parts

-

1k+ parts

$0.613

10k+ parts

-

19

$0.681

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$0.613

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.804

100+ parts

$0.795

1k+ parts

$0.763

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50

$0.804

$0.795

$0.763

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MKK Technologies

India . 1,673 parts In-Stock

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$1.280

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1,673

$1.280

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DigiPath Technology Company

USA . 1,673 parts In-Stock

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$1.280

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1,673

$1.280

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Native Components

USA . 670 parts In-Stock

1+ parts

$3,085.895

100+ parts

$3,024.177

1k+ parts

$2,993.318

10k+ parts

$2,962.459

670

$3,085.895

$3,024.177

$2,993.318

$2,962.459

Northwest PG Solutions

USA . 1,796 parts In-Stock

1+ parts

$3,394.485

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1,796

$3,394.485

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Kepictronics

USA . 13,000 parts In-Stock

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Corphita

USA . 2,618 parts In-Stock

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2,618

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Parana Technologies

USA . 1,111 parts In-Stock

1+ parts

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$0.814

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1,111

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$0.814

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Overview

Looking for a reliable and high-quality Power Bipolar Junction Transistor (BJT) for your switching applications? Look no further than the BUL382 by STMicroelectronics. With its NPN polarity, 400V maximum collector-emitter voltage, and 5A maximum collector current, this transistor offers exceptional performance and durability. Whether you're designing power supplies, motor controls, or inverters, the BUL382 is sure to meet your needs. Trust in STMicroelectronics' reputation for excellence and choose the BUL382 for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Commonly used in amplification and switching circuits, ensuring compatibility with various applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Maximum VCEsat: 1.1 V

Low saturation voltage helps in reducing power loss and improving efficiency.

Package Shape: RECTANGULAR

Easy to mount and integrate in various electronic devices.

Terminal Form: THROUGH-HOLE

Allows for easy soldering onto PCBs, enhancing the assembly process.

No. of Terminals: 3

Simplifies the connection process and reduces the risk of wiring errors.

Maximum Power Dissipation (Abs): 70 W

Capable of handling high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Allows for secure mounting and heat dissipation, ensuring optimal performance.

Maximum Power Dissipation Ambient: 70 W

Can dissipate heat effectively in various environmental conditions.

Minimum DC Current Gain (hFE): 8

Provides sufficient amplification for signal processing without excessive power consumption.

Maximum Operating Temperature: 150 °C

Can operate reliably in high-temperature environments.

Maximum Collector-Emitter Voltage: 400 V

Can handle high voltage levels, offering versatility in different circuit designs.

Transistor Element Material: SILICON

Ensures high performance and reliability in various operating conditions.

Maximum Turn On Time (ton): 1000 ns

Fast turn-on time for quick switching operations.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, suitable for power switching applications.

Maximum Turn Off Time (toff): 3300 ns

Fast turn-off time for efficient switching transitions.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability for reliable connections.

Terminal Position: SINGLE

Simplified terminal layout for easy installation and wiring.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL382 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3300 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL382 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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