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BUL39D

STMicroelectronics

BUL39D by STMicroelectronics

BUL39D by STMicroelectronics is a NPN Power BJT with 450V VCE, 4A IC, and 70W Ptot. Ideal for switching applications, it features a built-in diode and operates up to 150°C. The transistor has a hFE of at least 4 and a turn-off time of 1600ns, making it suitable for high-power tasks.

Median Price

$0.526

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 22 parts In-Stock

1+ parts

$0.567

100+ parts

$0.486

1k+ parts

$0.480

10k+ parts

-

22

$0.567

$0.486

$0.480

-

Verical

USA . 22 parts In-Stock

1+ parts

-

100+ parts

$0.485

1k+ parts

$0.480

10k+ parts

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22

-

$0.485

$0.480

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.365

100+ parts

-

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300

$0.365

-

-

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Digiode

USA . 4,153 parts In-Stock

1+ parts

$0.539

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-

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4,153

$0.539

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Vyrian

USA . 4,953 parts In-Stock

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-

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4,953

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Anansix

USA . 331 parts In-Stock

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331

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ComSIT Distribution GmbH

Germany . 250 parts In-Stock

1+ parts

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250

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Cyclops Electronics Ltd

UK . 160 parts In-Stock

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160

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VNN

France . 100 parts In-Stock

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100

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Bristol Electronics

USA . 70 parts In-Stock

1+ parts

-

100+ parts

$0.487

1k+ parts

-

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70

-

$0.487

-

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Microfarads

USA . 67 parts In-Stock

1+ parts

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67

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Lantek

USA . 44 parts In-Stock

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44

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Zilex Electronics Inc.

Canada . 40 parts In-Stock

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40

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 4,229 parts In-Stock

1+ parts

$0.365

100+ parts

-

1k+ parts

-

10k+ parts

$0.354

4,229

$0.365

-

-

$0.354

Continental Prestige Electronics

USA . 2,187 parts In-Stock

1+ parts

$0.365

100+ parts

-

1k+ parts

-

10k+ parts

$0.358

2,187

$0.365

-

-

$0.358

Modulus Dynamics

Lithuania . 34 parts In-Stock

1+ parts

$0.405

100+ parts

$0.401

1k+ parts

$0.389

10k+ parts

-

34

$0.405

$0.401

$0.389

-

Semicontronic

India . 22 parts In-Stock

1+ parts

$0.412

100+ parts

$0.402

1k+ parts

$0.400

10k+ parts

-

22

$0.412

$0.402

$0.400

-

Ampacity Inc.

Singapore . 17 parts In-Stock

1+ parts

$0.412

100+ parts

-

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-

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17

$0.412

-

-

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Corphita

USA . 3,425 parts In-Stock

1+ parts

$0.510

100+ parts

-

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-

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3,425

$0.510

-

-

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Corohmni

South Africa . 177 parts In-Stock

1+ parts

$0.857

100+ parts

-

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177

$0.857

-

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IDEA Electronic Components Group

UK . 1,579 parts In-Stock

1+ parts

$1.008

100+ parts

-

1k+ parts

$0.907

10k+ parts

-

1,579

$1.008

-

$0.907

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Aztec Data Supply Inc.

USA . 3,161 parts In-Stock

1+ parts

$1.010

100+ parts

-

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-

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3,161

$1.010

-

-

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MKK Technologies

India . 2,256 parts In-Stock

1+ parts

$1.896

100+ parts

-

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2,256

$1.896

-

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DigiPath Technology Company

USA . 2,256 parts In-Stock

1+ parts

$1.896

100+ parts

-

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-

10k+ parts

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2,256

$1.896

-

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Advanced Electronics

New Zealand . 200 parts In-Stock

1+ parts

$2.207

100+ parts

$2.008

1k+ parts

$1.810

10k+ parts

-

200

$2.207

$2.008

$1.810

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AZTECH Wire

Italy . 462 parts In-Stock

1+ parts

$16.164

100+ parts

-

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462

$16.164

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Lixinc

USA . 15,904 parts In-Stock

1+ parts

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15,904

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Kepictronics

USA . 12,000 parts In-Stock

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12,000

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A-Z Elektronik GmbH

Germany . 6,534 parts In-Stock

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6,534

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Infinite Electronics LLP (Excess)

. 6,001 parts In-Stock

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6,001

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Alle Elektronik GmbH

Germany . 4,356 parts In-Stock

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4,356

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S.R.D Solutions

India . 3,000 parts In-Stock

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3,000

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Assy Fe

Spain . 1,426 parts In-Stock

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1,426

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.358

1k+ parts

$0.347

10k+ parts

$0.339

1,000

-

$0.358

$0.347

$0.339

Parana Technologies

USA . 477 parts In-Stock

1+ parts

-

100+ parts

$1.206

1k+ parts

-

10k+ parts

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477

-

$1.206

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Robosynatics

Brazil . 100 parts In-Stock

1+ parts

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100

-

-

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Lucentia Tech

USA . 100 parts In-Stock

1+ parts

-

100+ parts

$8.090

1k+ parts

$8.090

10k+ parts

$8.090

100

-

$8.090

$8.090

$8.090

Overview

Discover the BUL39D from STMicroelectronics, a top-quality Power Bipolar Junction Transistor perfect for switching applications. With a maximum collector-emitter voltage of 450V and a maximum power dissipation of 70W, this NPN transistor offers reliable performance and durability. Its single configuration with built-in diode ensures easy installation, while its matte tin terminal finish guarantees long-lasting use. Trust STMicroelectronics for cutting-edge technology that delivers exceptional value and efficiency to meet all your power needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material makes the transistor lightweight and durable, ideal for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, making this product versatile.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode simplifies circuit design and can provide added protection against reverse currents.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Maximum VCEsat: 1.1 V

With a low VCEsat value, this transistor minimizes power loss and improves overall efficiency in switching operations.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy mounting and integration into electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection, making installation straightforward.

Maximum Power Dissipation (Abs): 70 W

With a high power dissipation capacity, this transistor can handle demanding loads without overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount package style offers mechanical stability and ease of mounting in various applications.

Maximum Power Dissipation Ambient: 70 W

The high ambient power dissipation rating ensures reliable performance even in elevated temperature environments.

Minimum DC Current Gain (hFE): 4

The minimum DC current gain of 4 indicates good amplification capabilities, essential for efficient signal processing.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 450 V

The high collector-emitter voltage rating allows for operation in high voltage circuits, expanding the range of potential applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, ensuring long-term functionality in various operating conditions.

Maximum Collector Current (IC): 4 A

With a maximum collector current of 4 A, this transistor can handle high current loads with ease, suitable for power applications.

Maximum Turn Off Time (toff): 1600 ns

The fast turn-off time of 1600 ns enhances the efficiency of switching operations, reducing switching losses and improving overall performance.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring a reliable electrical connection.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making the transistor easy to use in various circuit configurations.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL39D attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

4 A

Maximum Collector-Emitter Voltage:

450 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

70 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1600 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL39D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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