Loading...

BUL310PI

STMicroelectronics

BUL310PI by STMicroelectronics

BUL310PI by STMicroelectronics is an NPN power BJT ideal for switching applications. It features a max VCEsat of 1.1V, supports up to 5A collector current, and operates at a max temp of 150 °C. Its robust design ensures reliable performance in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,773 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,773

-

-

-

-

Anansix

USA . 2,202 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,202

-

-

-

-

Digiode

USA . 238 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

238

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 384 parts In-Stock

1+ parts

$0.439

100+ parts

-

1k+ parts

$0.395

10k+ parts

-

384

$0.439

-

$0.395

-

MKK Technologies

India . 1,215 parts In-Stock

1+ parts

$0.825

100+ parts

-

1k+ parts

-

10k+ parts

-

1,215

$0.825

-

-

-

DigiPath Technology Company

USA . 1,215 parts In-Stock

1+ parts

$0.825

100+ parts

-

1k+ parts

-

10k+ parts

-

1,215

$0.825

-

-

-

Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,986

-

-

-

-

Kepictronics

USA . 13,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

13,000

-

-

-

-

Northwest PG Solutions

USA . 2,310 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,310

-

-

-

-

Corphita

USA . 1,207 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,207

-

-

-

-

Parana Technologies

USA . 667 parts In-Stock

1+ parts

-

100+ parts

$0.525

1k+ parts

-

10k+ parts

-

667

-

$0.525

-

-

Native Components

USA . 357 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

357

-

-

-

-

Assy Fe

Spain . 3 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3

-

-

-

-

Overview

Elevate your projects with the BUL310PI from STMicroelectronics, a trusted leader in semiconductor innovation. This reliable NPN power BJT is engineered for optimal switching performance, making it perfect for various applications—from industrial automation to consumer electronics. With exceptional quality and robust power handling, the BUL310PI ensures efficient operation and longevity, giving you peace of mind and superior value in every circuit design.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures robust performance and protection against environmental factors, making this BJT suitable for various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it is ideal for driving capacitive loads and provides high-speed switching capabilities, which is essential for efficient circuit designs.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces the footprint, making it easier to incorporate into diverse applications.

Transistor Application: SWITCHING

Designed for switching applications, this BJT allows for efficient control of electrical power, making it suitable for low to medium power applications.

Maximum VCEsat: 1.1 V

Low saturation voltage ensures minimal power loss during operation, resulting in higher efficiency and better performance in power circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easier placement in compact designs, optimizing space and facilitating integration into different layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical stability and effective heat dissipation, which enhances the reliability of the connections in the circuit.

No. of Terminals: 3

With three terminals, this BJT offers simplicity and ease of integration into standard circuits, reducing complexity during assembly.

Maximum Power Dissipation (Abs): 35 W

The high power dissipation rating ensures that the transistor can handle substantial loads, making it suitable for power-intensive applications.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers stability and better heat transfer, contributing to the longevity and reliability of the device in demanding environments.

Maximum Power Dissipation Ambient: 35 W

This rating allows for effective operation in ambient conditions without risking thermal overload, ensuring consistent performance.

Minimum DC Current Gain (hFE): 10

A minimum current gain of 10 signifies good amplification capability, making this BJT effective in switching and amplification applications.

Maximum Operating Temperature: 150 °C

Operating at high temperatures increases versatility, enabling use in high-temperature environments that may be unsuitable for other transistors.

Maximum Collector-Emitter Voltage: 500 V

High voltage tolerance allows this BJT to be used in high-voltage applications, expanding its usability in various electronic circuits.

Transistor Element Material: SILICON

Silicon material ensures reliability and efficiency in performance, contributing to the overall durability of the transistor.

Maximum Collector Current (IC): 5 A

The capability to handle up to 5 A of collector current makes this transistor suitable for a wide range of power applications.

Maximum Turn Off Time (toff): 2060 ns

Quick turn-off time enhances the transistor's performance in high-frequency applications, making it suitable for dynamic switching scenarios.

Terminal Finish: MATTE TIN

Matte tin finish ensures excellent solderability and corrosion resistance, improving the overall quality of connections in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies the layout and design process, providing ease of integration and reducing manufacturing complexity.

Case Connection: ISOLATED

Isolated case connection enhances safety and reduces the risk of short circuits, ensuring reliable operation in sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL310PI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

500 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

35 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

2060 ns

Maximum VCEsat:

1.1 V

Trade Compliance

BUL310PI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 12