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STD830CP40

STMicroelectronics

STD830CP40 by STMicroelectronics

STD830CP40 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 400V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient circuit designs in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,671 parts In-Stock

1+ parts

-

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1k+ parts

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3,671

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-

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Digiode

USA . 1,222 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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1,222

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-

-

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Anansix

USA . 517 parts In-Stock

1+ parts

-

100+ parts

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517

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 986 parts In-Stock

1+ parts

$1.530

100+ parts

-

1k+ parts

$1.377

10k+ parts

-

986

$1.530

-

$1.377

-

MKK Technologies

India . 1,079 parts In-Stock

1+ parts

$2.877

100+ parts

-

1k+ parts

-

10k+ parts

-

1,079

$2.877

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DigiPath Technology Company

USA . 1,079 parts In-Stock

1+ parts

$2.877

100+ parts

-

1k+ parts

-

10k+ parts

-

1,079

$2.877

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-

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AZTECH Wire

Italy . 1,138 parts In-Stock

1+ parts

$10.310

100+ parts

-

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1,138

$10.310

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-

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Component Stockers USA

USA . 344 parts In-Stock

1+ parts

$99.990

100+ parts

-

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10k+ parts

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344

$99.990

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-

-

Perfect Parts

USA . 2,061 parts In-Stock

1+ parts

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2,061

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Corphita

USA . 1,175 parts In-Stock

1+ parts

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1,175

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Parana Technologies

USA . 250 parts In-Stock

1+ parts

-

100+ parts

$1.829

1k+ parts

-

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250

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$1.829

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Overview

Unlock the power of efficiency with the STD830CP40 from STMicroelectronics! Designed for seamless switching applications, this versatile NPN and PNP transistor excels in performance and reliability. With STMicroelectronics' renowned quality, customers benefit from robust operation under various conditions—maxing out at 400V and 3A. Ideal for everything from consumer electronics to industrial automation, elevate your projects with a trusted partner that delivers exceptional value and unmatched durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body provides durability and resistance to environmental stress, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP configurations enhances design flexibility, allowing for versatile circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS

Having separate elements allows for independent functionality while utilizing a common package, facilitating easier integration in designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor reliably operates at high speeds, making it ideal for power management.

Package Shape: RECTANGULAR

The rectangular package shape optimizes spacing on the PCB, enabling compact designs without compromising performance.

Terminal Form: THROUGH-HOLE

Through-hole design ensures sturdy connections and is suitable for high-power applications, providing excellent mechanical stability.

No. of Elements: 2

The presence of two elements in a single package reduces board space usage and simplifies the circuit design process.

No. of Terminals: 8

With 8 terminals, this BJT offers ample connectivity options for various configurations, accommodating a wide range of circuit needs.

Package Style (Meter): IN-LINE

In-line package style is ideal for automated manufacturing processes, ensuring ease of assembly and consistent performance.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures adequate amplification, enhancing circuit functionality while allowing for efficient power usage.

Maximum Operating Temperature: 150 °C

The ability to operate at up to 150 °C makes this transistor suitable for high-temperature environments, enhancing reliability.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400V, it can handle high voltage applications, making it highly versatile in power circuits.

Transistor Element Material: SILICON

Silicon as the element material offers excellent thermal stability and performance, ensuring reliable operation over time.

Maximum Collector Current (IC): 3 A

A maximum collector current of 3 A allows for handling significant loads, making this transistor suitable for high-power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring durable connections.

Terminal Position: DUAL

The dual terminal position facilitates improved layout options on the PCB, optimizing circuit design and placement efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD830CP40 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD830CP40 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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