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STD830CP20

STMicroelectronics

STD830CP20 by STMicroelectronics

STD830CP20 by STMicroelectronics is a versatile NPN/PNP power BJT designed for switching applications. It features a max collector-emitter voltage of 200V, operates at up to 150 °C, and supports a collector current of 3A. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,545 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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4,545

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-

-

-

Vyrian

USA . 4,396 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,396

-

-

-

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Anansix

USA . 2,004 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,004

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-

-

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,522 parts In-Stock

1+ parts

$1.655

100+ parts

-

1k+ parts

$1.490

10k+ parts

-

1,522

$1.655

-

$1.490

-

MKK Technologies

India . 1,688 parts In-Stock

1+ parts

$3.112

100+ parts

-

1k+ parts

-

10k+ parts

-

1,688

$3.112

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-

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DigiPath Technology Company

USA . 1,688 parts In-Stock

1+ parts

$3.112

100+ parts

-

1k+ parts

-

10k+ parts

-

1,688

$3.112

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-

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Corphita

USA . 3,581 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,581

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Parana Technologies

USA . 299 parts In-Stock

1+ parts

-

100+ parts

$1.979

1k+ parts

-

10k+ parts

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299

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$1.979

-

-

Overview

Elevate your projects with the STD830CP20 from STMicroelectronics, a trusted name in high-quality semiconductor solutions. This versatile power BJT delivers exceptional performance in switching applications, ensuring reliability and efficiency for your designs. With its robust NPN and PNP configurations, you gain flexibility across various circuits. Experience the unmatched durability and resilience that only STMicroelectronics can provide, empowering your innovations today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body ensures reliable performance and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Supports both NPN and PNP configurations, providing versatility for different circuit designs and applications.

Configuration: SEPARATE, 2 ELEMENTS

The separate configuration allows for easy integration into circuits, optimizing space and layout design.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable performance in signal control.

Package Shape: RECTANGULAR

The rectangular shape enhances stability and fit within electronic assemblies, facilitating easy installation.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure mounting and stability, ideal for robust circuit board designs.

No. of Elements: 2

Having two elements allows for dual configurations, which can optimize performance and simplify circuit design.

No. of Terminals: 8

With 8 terminals, this device offers ample connectivity options for versatile circuit designs and easy integration.

Package Style (Meter): IN-LINE

The in-line package style provides a streamlined design, making it a good fit for various equipment and PCB layouts.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures sufficient amplification for various electronic applications, enhancing efficiency.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature (150 °C) allows for operation in demanding environments, increasing reliability.

Maximum Collector-Emitter Voltage: 200 V

With a maximum collector-emitter voltage of 200V, this transistor can handle high-voltage applications safely.

Transistor Element Material: SILICON

Silicon material provides excellent electrical characteristics, making the transistor efficient and reliable in various applications.

Maximum Collector Current (IC): 3 A

The ability to handle up to 3A of collector current assures that this transistor can meet the demands of high-power applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish ensures good solderability and prevents oxidation, enhance connectivity and longevity.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in PCB design, enabling better layout options and space utilization.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD830CP20 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

200 V

Configuration:

Minimum DC Current Gain (hFE):

4

JESD-30 Code:

R-PDIP-T8

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

8

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD830CP20 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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