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STD83003T4

STMicroelectronics

STD83003T4 by STMicroelectronics

STD83003T4 from STMicroelectronics is an NPN BJT designed for switching applications. It features a max power dissipation of 20W, operates up to 150 °C, and supports a collector-emitter voltage of 400V. Ideal for compact electronic circuits with surface mount design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 1,475 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,475

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-

-

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Digiode

USA . 1,127 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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1,127

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-

-

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Vyrian

USA . 929 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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929

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,971 parts In-Stock

1+ parts

$1.266

100+ parts

-

1k+ parts

$1.139

10k+ parts

-

1,971

$1.266

-

$1.139

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MKK Technologies

India . 2,073 parts In-Stock

1+ parts

$2.380

100+ parts

-

1k+ parts

-

10k+ parts

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2,073

$2.380

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-

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DigiPath Technology Company

USA . 2,073 parts In-Stock

1+ parts

$2.380

100+ parts

-

1k+ parts

-

10k+ parts

-

2,073

$2.380

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-

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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56,986

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-

-

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Kepictronics

USA . 13,000 parts In-Stock

1+ parts

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100+ parts

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13,000

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Corphita

USA . 2,821 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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2,821

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,000

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-

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Parana Technologies

USA . 1,479 parts In-Stock

1+ parts

-

100+ parts

$1.514

1k+ parts

-

10k+ parts

-

1,479

-

$1.514

-

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Overview

Elevate your designs with the STD83003T4 from STMicroelectronics, a top-tier NPN power BJT that excels in switching applications. Renowned for their commitment to quality and innovation, STMicroelectronics ensures reliability and performance in every component. With a compact surface mount design and exceptional power handling capabilities, this transistor is perfect for modern electronics, delivering value that enhances efficiency and durability in your projects. Unlock new possibilities with ST’s trusted technology!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides good mechanical strength and thermal stability, making this transistor durable and reliable in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for efficient switching and amplification, making it suitable for various electronic circuits.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it ideal for applications with space constraints.

Transistor Application: SWITCHING

Designed for switching applications, this transistor effectively controls large currents, making it ideal for power management tasks.

Surface Mount: YES

The surface mount capability allows for easy integration into compact PCB designs, optimizing space and enhancing performance.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layouts and stacking in PCB designs, improving overall circuitry organization.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering stability and reliability, ensuring strong electrical connections.

No. of Terminals: 2

The two-terminal design simplifies connections and reduces the complexity of circuit assembly.

Maximum Power Dissipation (Abs): 20 W

With a maximum power dissipation of 20 W, this transistor can handle substantial power loads, making it suitable for high-capacity applications.

Package Style (Meter): SMALL OUTLINE

A small outline package allows for high-density mounting on PCBs, making it suitable for modern compact electronic devices.

Minimum DC Current Gain (hFE): 4

A minimum DC current gain of 4 ensures adequate amplification, allowing this transistor to be effective in various signal processing applications.

Maximum Operating Temperature: 150 °C

Operating at temperatures up to 150 °C makes this transistor suitable for high-temperature environments, enhancing its versatility.

Maximum Collector-Emitter Voltage: 400 V

With a high maximum collector-emitter voltage of 400 V, it can be used in high-voltage applications, ensuring operational reliability.

Transistor Element Material: SILICON

Silicon as the element material ensures stable performance and efficiency, as well as widespread compatibility with existing electronic components.

Maximum Collector Current (IC): 1.5 A

Supporting a maximum collector current of 1.5 A allows for substantial load handling, making it suitable for a range of power applications.

Terminal Finish: MATTE TIN

The matte tin finish enhances solderability and protects against oxidation, ensuring durable and reliable connections.

Terminal Position: SINGLE

The single terminal position simplifies layout and assembly processes, reducing production complexity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STD83003T4 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STD83003T4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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