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BUT70W

STMicroelectronics

BUT70W by STMicroelectronics

BUT70W by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 200 W, operates up to 150 °C, and supports collector-emitter voltages of 125 V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,504 parts In-Stock

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6,504

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Anansix

USA . 2,741 parts In-Stock

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2,741

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Digiode

USA . 2,119 parts In-Stock

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2,119

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Resion

USA . 10 parts In-Stock

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10

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 134 parts In-Stock

1+ parts

$1.032

100+ parts

-

1k+ parts

$0.929

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134

$1.032

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$0.929

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MKK Technologies

India . 2,207 parts In-Stock

1+ parts

$1.941

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2,207

$1.941

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DigiPath Technology Company

USA . 2,207 parts In-Stock

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$1.941

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2,207

$1.941

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AZTECH Wire

Italy . 637 parts In-Stock

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$8.660

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637

$8.660

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Component Stockers USA

USA . 640 parts In-Stock

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$99.990

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640

$99.990

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Alle Elektronik GmbH

Germany . 4,463 parts In-Stock

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4,463

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Parana Technologies

USA . 2,317 parts In-Stock

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$1.234

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2,317

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$1.234

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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2,000

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Northwest PG Solutions

USA . 1,030 parts In-Stock

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Corphita

USA . 905 parts In-Stock

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905

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Perfect Parts

USA . 784 parts In-Stock

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784

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Native Components

USA . 318 parts In-Stock

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318

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Overview

Unlock unparalleled performance with the BUT70W from STMicroelectronics, a leader in semiconductor innovation. This robust NPN transistor excels in switching applications, offering reliability and efficiency that elevate your projects. With its high power dissipation and wide temperature range, it’s perfect for demanding environments. Choose the BUT70W to ensure your designs deliver exceptional value and durability, empowering you to achieve your goals with confidence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body provides durability and resistance to environmental factors, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient switching and amplification, making it ideal for a wide range of electronic circuits.

Configuration: SINGLE

A single configuration makes this transistor easy to integrate into designs without additional complexity.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT can handle rapid on and off states, enhancing performance in digital circuits.

Package Shape: RECTANGULAR

The rectangular shape can facilitate easier layout on circuit boards, improving overall design efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and stable connection, ensuring reliable performance in various electronic applications.

No. of Terminals: 3

Having three terminals allows for versatile connections, making it easy to use in different configurations.

Maximum Power Dissipation (Abs): 200 W

A high maximum power dissipation rating enables this BJT to handle substantial loads, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style allows for secure fixation and helps dissipate heat efficiently, which is crucial for reliable operation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT can operate in demanding environments, enhancing its versatility.

Maximum Collector-Emitter Voltage: 125 V

A maximum collector-emitter voltage of 125 V allows for use in high-voltage applications, expanding its usability.

Transistor Element Material: SILICON

Silicon material ensures improved performance characteristics such as thermal stability and efficient conductivity.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring long-lasting connections.

Terminal Position: SINGLE

A single terminal position simplifies the design process and enhances ease of use in circuit layouts.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT70W attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector-Emitter Voltage:

125 V

Configuration:

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUT70W Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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