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BUT70

STMicroelectronics

BUT70 by STMicroelectronics

STMicroelectronics' BUT70 is a NPN BJT transistor with max VCEsat of 0.9V, IC of 40A, and Pmax of 200W. Ideal for switching applications due to its single configuration and fast turn-off time of 550ns. The package style is flange mount with through-hole terminals, making it suitable for high-power operations up to 150 °C.

Median Price

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Lifecycle Status

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7

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1k+

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Digiode

USA . 2,724 parts In-Stock

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Anansix

USA . 1,952 parts In-Stock

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Vyrian

USA . 1,669 parts In-Stock

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ECAB

Sweden . 600 parts In-Stock

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Freddi Giovanni

Italy . 400 parts In-Stock

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ComSIT Distribution GmbH

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Fibra_Brandt Electronic GMBH

Germany . 5 parts In-Stock

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IDEA Electronic Components Group

UK . 1,298 parts In-Stock

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$0.460

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MKK Technologies

India . 651 parts In-Stock

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DigiPath Technology Company

USA . 651 parts In-Stock

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Northwest PG Solutions

USA . 2,087 parts In-Stock

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Corphita

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Parana Technologies

USA . 1,079 parts In-Stock

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Native Components

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Assy Fe

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Overview

Upgrade your power systems with the BUT70 from STMicroelectronics. Manufactured by a trusted industry leader, this Power Bipolar Junction Transistor is designed for high-performance switching applications. With a maximum VCEsat of just 0.9V and a maximum collector current of 40A, this NPN transistor offers exceptional power dissipation of up to 200W. Its durable plastic/epoxy package and through-hole terminals make it easy to install, while its high-quality silicon element ensures reliability. Trust the BUT70 to deliver superior performance and efficiency in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration with existing NPN circuits, providing compatibility and versatility.

Configuration: SINGLE

Single configuration simplifies circuit design and installation, making it easier to use for applications requiring only one transistor.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast switching speeds and efficient performance in various electronic devices.

Maximum VCEsat: 0.9 V

Low VCE saturation voltage ensures minimal power loss and efficient operation of the transistor in switching applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and compact placement within electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering for reliable circuit integration.

Maximum Power Dissipation (Abs): 200 W

High absolute maximum power dissipation rating allows for handling of high-power applications and prevents overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers secure mounting options for stability and durability in various electronic systems.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in diverse operating environments without overheating.

Maximum Collector-Emitter Voltage: 125 V

High maximum collector-emitter voltage rating provides versatility for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistor element material offers high reliability, low leakage, and improved performance characteristics for long-lasting operation.

Maximum Collector Current (IC): 40 A

High maximum collector current rating allows for handling of high current loads, making it suitable for a wide range of applications.

Maximum Turn Off Time (toff): 550 ns

Fast turn-off time ensures efficient switching and response times for improved performance in switching applications.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and corrosion resistance, ensuring reliable connections for long-term use.

Terminal Position: SINGLE

Single terminal position simplifies installation and connection, making it easier for users to integrate the transistor into their circuits.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUT70 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

125 V

Configuration:

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

200 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

550 ns

Maximum VCEsat:

.9 V

Trade Compliance

BUT70 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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