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STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 8,564 parts In-Stock

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Digiode

USA . 2,076 parts In-Stock

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Anansix

USA . 674 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 70 parts In-Stock

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PC Components Company LLC

USA . 8 parts In-Stock

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Bristol Electronics

USA . 4 parts In-Stock

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IDEA Electronic Components Group

UK . 344 parts In-Stock

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$1.278

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$1.150

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MKK Technologies

India . 1,390 parts In-Stock

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$2.403

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DigiPath Technology Company

USA . 1,390 parts In-Stock

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AZTECH Wire

Italy . 372 parts In-Stock

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$11.510

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Component Stockers USA

USA . 787 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 20,897 parts In-Stock

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Corphita

USA . 4,692 parts In-Stock

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Alle Elektronik GmbH

Germany . 3,204 parts In-Stock

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Parana Technologies

USA . 1,352 parts In-Stock

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Perfect Parts

USA . 390 parts In-Stock

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Overview

Elevate your designs with the STE07DE220 from STMicroelectronics, a powerhouse in NPN transistors that combines exceptional performance with unmatched reliability. Engineered for seamless switching applications, this robust component delivers up to 220W power dissipation and thrives even in challenging environments, ensuring your systems run smoothly. Trust in STMicroelectronics' legacy of innovation to unlock new possibilities, enhancing efficiency and longevity in your projects.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are versatile and commonly used for switching applications, making this product suitable for a wide range of electronic circuits.

Configuration: Single with Built-in FET and Diode

The integrated FET and diode enhance performance and simplify circuit design, providing reliable functionality in compact packages.

Transistor Application: Switching

Designed specifically for switching, this transistor delivers fast response times and efficient operation in high-frequency applications.

Package Shape: Rectangular

The rectangular package allows for efficient space utilization on PCB layouts, facilitating compact designs in various electronic applications.

No. of Terminals: 4

Having four terminals provides additional versatility for circuit configurations, enabling more complex designs and functionalities.

Maximum Power Dissipation (Abs): 220 W

With a maximum power dissipation of 220 W, this transistor can handle high loads, making it ideal for demanding applications.

Package Style (Meter): Flange Mount

The flange mount style ensures secure attachment and good thermal performance, which are critical in high-power applications.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows the transistor to function reliably in high-temperature environments, enhancing durability.

Transistor Element Material: Silicon

Silicon is a standard material for BJTs, providing good thermal stability and electrical performance, ensuring reliable operation.

Maximum Collector Current (IC): 7 A

With a maximum collector current of 7 A, this transistor is capable of handling substantial current loads, making it suitable for high-power applications.

Terminal Finish: Nickel

Nickel terminal finish provides good conductivity and resistance to corrosion, ensuring long-term reliability and performance.

Terminal Position: Upper

Upper terminal positioning can simplify routing in circuit designs, allowing for more efficient layouts and easier assembly.

Case Connection: Isolated

Isolated case connections enhance safety and prevent electrical interference, making the transistor a reliable choice for sensitive applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STE07DE220 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

7 A

JESD-30 Code:

R-XUFM-X4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STE07DE220 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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