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STK13003

STMicroelectronics

STK13003 by STMicroelectronics

STK13003 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages of 400V. Ideal for efficient circuit designs in various electronic devices.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 3,627 parts In-Stock

1+ parts

$0.770

100+ parts

$0.312

1k+ parts

$0.216

10k+ parts

$0.196

3,627

$0.770

$0.312

$0.216

$0.196

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Whistler Technology

UK . 5,590 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,590

-

-

-

-

Anansix

USA . 2,718 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,718

-

-

-

-

Digiode

USA . 1,446 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,446

-

-

-

-

Vyrian

USA . 1,209 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,209

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 715 parts In-Stock

1+ parts

$1.483

100+ parts

-

1k+ parts

$1.335

10k+ parts

-

715

$1.483

-

$1.335

-

Advanced Electronics

New Zealand . 2,500 parts In-Stock

1+ parts

$2.158

100+ parts

$1.964

1k+ parts

$1.770

10k+ parts

-

2,500

$2.158

$1.964

$1.770

-

MKK Technologies

India . 152 parts In-Stock

1+ parts

$2.789

100+ parts

-

1k+ parts

-

10k+ parts

-

152

$2.789

-

-

-

DigiPath Technology Company

USA . 152 parts In-Stock

1+ parts

$2.789

100+ parts

-

1k+ parts

-

10k+ parts

-

152

$2.789

-

-

-

Microchip USA

USA . 138 parts In-Stock

1+ parts

$3.965

100+ parts

-

1k+ parts

-

10k+ parts

-

138

$3.965

-

-

-

AZTECH Wire

Italy . 1,209 parts In-Stock

1+ parts

$18.840

100+ parts

-

1k+ parts

-

10k+ parts

-

1,209

$18.840

-

-

-

GreenTree Electronics

Israel . 20,490 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,490

-

-

-

-

Infinite Electronics LLP (Excess)

. 10,001 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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10,001

-

-

-

-

Perfect Parts

USA . 4,778 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,778

-

-

-

-

Alle Elektronik GmbH

Germany . 3,799 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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3,799

-

-

-

-

Parana Technologies

USA . 1,397 parts In-Stock

1+ parts

-

100+ parts

$1.773

1k+ parts

-

10k+ parts

-

1,397

-

$1.773

-

-

Cyclops Electronics Ltd (Excess)

UK . 200 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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200

-

-

-

-

Corphita

USA . 189 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

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189

-

-

-

-

Overview

Elevate your power management solutions with the STK13003 from STMicroelectronics, a trusted leader in semiconductor innovation. This NPN transistor excels in switching applications, delivering robust performance and reliability to ensure your designs operate seamlessly. With its durable plastic/epoxy package and impressive thermal handling capability, it’s perfect for high-demand environments. Experience enhanced efficiency and stability, empowering your projects to reach new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the transistor reliable in various applications.

Polarity or Channel Type: NPN

NPN transistors are well-suited for high-speed switching and amplification, making them a popular choice in electronic circuits.

Configuration: SINGLE

A single configuration simplifies design and reduces space requirements on PCBs, making it ideal for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT can effectively control power in digital circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various electronic designs, providing flexibility in layout.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring reliability in high-stress environments.

No. of Terminals: 3

Having three terminals enhances the transistor's functionality, allowing for easier circuit configuration and connection.

Maximum Power Dissipation (Abs): 40 W

A high power dissipation rating means this transistor can handle significant electrical load without overheating, enhancing durability.

Package Style (Meter): IN-LINE

In-line packaging facilitates automatic assembly processes, improving manufacturing efficiency and lowering costs.

Minimum DC Current Gain (hFE): 5

A minimum hFE of 5 indicates a reasonable level of amplification, making this transistor suitable for a variety of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this BJT can function reliably in extreme conditions, offering versatility in applications.

Maximum Collector-Emitter Voltage: 400 V

A high collector-emitter voltage rating allows this transistor to be used in high-voltage applications, increasing its usability.

Transistor Element Material: SILICON

Silicon as the base material enhances performance, providing good thermal stability and electrical characteristics.

Maximum Collector Current (IC): 1.5 A

The ability to handle up to 1.5 A of collector current makes this transistor suitable for a variety of power applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring longevity and reliability.

Terminal Position: SINGLE

With a single terminal position, this transistor is easy to integrate into various designs, enhancing layout simplicity.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STK13003 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

5

JESD-30 Code:

R-PSIP-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STK13003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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