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STK12IE90

STMicroelectronics

STK12IE90 by STMicroelectronics

STK12IE90 from STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max collector current of 12 A, operates up to 150 °C, and has a min DC gain (hFE) of 11. Ideal for efficient power management in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,420 parts In-Stock

1+ parts

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4,420

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Vyrian

USA . 2,793 parts In-Stock

1+ parts

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1k+ parts

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2,793

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Anansix

USA . 929 parts In-Stock

1+ parts

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929

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,323 parts In-Stock

1+ parts

$1.155

100+ parts

-

1k+ parts

$1.039

10k+ parts

-

2,323

$1.155

-

$1.039

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MKK Technologies

India . 803 parts In-Stock

1+ parts

$2.171

100+ parts

-

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10k+ parts

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803

$2.171

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DigiPath Technology Company

USA . 803 parts In-Stock

1+ parts

$2.171

100+ parts

-

1k+ parts

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-

803

$2.171

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Corphita

USA . 4,637 parts In-Stock

1+ parts

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4,637

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Parana Technologies

USA . 2,332 parts In-Stock

1+ parts

-

100+ parts

$1.380

1k+ parts

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10k+ parts

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2,332

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$1.380

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Overview

Elevate your projects with the STK12IE90 from STMicroelectronics, a trusted leader in innovative semiconductor solutions. This powerful NPN transistor combines reliability and efficiency, making it perfect for switching applications. Designed for easy integration, its robust construction and high-performance capabilities ensure long-lasting operation under demanding conditions. Experience unmatched quality and value, empowering your designs to thrive in any environment!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and heat resistance, ensuring long-lasting performance in various applications.

Polarity or Channel Type: NPN

As an NPN transistor, it allows for high-speed switching and efficient amplification, making it suitable for a wide range of electronic circuits.

Configuration: SINGLE WITH BUILT-IN FET AND DIODE

The integrated FET and diode enhance the functionality and reduce the need for additional components, simplifying circuit design.

Transistor Application: SWITCHING

Designed specifically for switching applications, it offers reliable performance in controlling power and signal paths in various devices.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, making it easier to fit into compact electronic designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical stability and ease of soldering, ensuring reliable electrical connections.

No. of Terminals: 5

The five terminals enable versatile connection options, allowing for complex circuit configurations while maintaining simplicity.

Package Style (Meter): FLANGE MOUNT

Flange mount style ensures secure mounting and thermal dissipation, making it suitable for high-power applications.

Minimum DC Current Gain (hFE): 11

A minimum current gain of 11 indicates good amplification capability, enabling effective signal processing in electronic applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures enhances reliability in demanding environments, reducing the risk of thermal failure.

Transistor Element Material: SILICON

Silicon as the base material ensures intrinsic stability and durability, making the transistor effective for a wide array of electronic devices.

Maximum Collector Current (IC): 12 A

Supporting a high collector current of 12 A makes it suitable for driving loads and handling heavy current applications efficiently.

Terminal Position: SINGLE

Single terminal position simplifies PCB layout and arrangement, making it easier to integrate into different circuit designs.

Technical Specifications

Power Bipolar Junction Transistors (BJT) STK12IE90 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

11

JESD-30 Code:

R-PSFM-T5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

STK12IE90 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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