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ST93003

STMicroelectronics

ST93003 by STMicroelectronics

ST93003 by STMicroelectronics is a PNP BJT designed for switching applications. It features a max power dissipation of 40W, operates up to 150 °C, and supports collector-emitter voltages up to 400V. Ideal for efficient power management in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 41,500 parts In-Stock

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41,500

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Vyrian

USA . 8,011 parts In-Stock

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8,011

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Digiode

USA . 1,883 parts In-Stock

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1,883

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Anansix

USA . 779 parts In-Stock

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779

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Zilex Electronics Inc.

Canada . 597 parts In-Stock

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597

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 911 parts In-Stock

1+ parts

$1.141

100+ parts

-

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$1.027

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911

$1.141

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$1.027

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MKK Technologies

India . 2,275 parts In-Stock

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$2.145

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2,275

$2.145

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DigiPath Technology Company

USA . 2,275 parts In-Stock

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$2.145

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2,275

$2.145

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AZTECH Wire

Italy . 694 parts In-Stock

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$19.360

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694

$19.360

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Ampacity Inc.

Singapore . 495 parts In-Stock

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$64.050

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495

$64.050

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Component Stockers USA

USA . 279 parts In-Stock

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$99.990

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279

$99.990

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RC Electronics

USA . 48,600 parts In-Stock

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48,600

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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Perfect Parts

USA . 20,272 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,686 parts In-Stock

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6,686

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Alle Elektronik GmbH

Germany . 4,584 parts In-Stock

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4,584

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Corphita

USA . 4,387 parts In-Stock

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4,387

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Parana Technologies

USA . 1,170 parts In-Stock

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$1.364

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1,170

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$1.364

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Glotronic Ltd.

UK . 77 parts In-Stock

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77

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Overview

Elevate your projects with the ST93003 from STMicroelectronics, a trusted leader in semiconductor innovation. This PNP power bipolar junction transistor delivers exceptional performance for switching applications, ensuring reliability and efficiency in every use. Crafted with high-quality materials, it withstands demanding conditions while providing robust power handling capabilities. Choose ST93003 for unparalleled value and benefit, powering your designs to success!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and resistance to environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, this component allows for efficient control of current flow, making it ideal for applications requiring low-side switching.

Configuration: SINGLE

The single configuration simplifies circuit design, making it easier to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures fast response times, which is crucial for efficient power management.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, allowing for compact designs while still maintaining ease of handling.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections and are suitable for robust applications in both prototyping and production.

No. of Terminals: 3

With three terminals, this transistor offers versatility in circuit configurations, allowing for different modes of operation.

Maximum Power Dissipation (Abs): 40 W

A high maximum power dissipation of 40 W ensures that this transistor can handle demanding applications without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount style facilitates easy mounting, ensuring secure placement in rugged environments and improving thermal management.

Minimum DC Current Gain (hFE): 4

A minimum hFE of 4 indicates good current amplification, enabling efficient control of larger loads with minimal input current.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this transistor to function effectively in demanding thermal conditions.

Maximum Collector-Emitter Voltage: 400 V

With a maximum collector-emitter voltage of 400 V, this transistor is capable of handling high-voltage applications, enhancing its versatility.

Transistor Element Material: SILICON

Made from silicon, this transistor benefits from established manufacturing processes and reliable electrical performance.

Maximum Collector Current (IC): 1.5 A

A maximum collector current of 1.5 A allows for the control of significant currents, making this product suitable for a range of applications.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and resistance to corrosion, ensuring reliable long-term performance.

Terminal Position: SINGLE

The single terminal position simplifies the layout and design of circuits, making assembly and troubleshooting easier.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST93003 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-126

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST93003 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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