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ST2310FX

STMicroelectronics

ST2310FX by STMicroelectronics

ST2310FX by STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages up to 600V. Ideal for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,337 parts In-Stock

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8,337

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Anansix

USA . 1,652 parts In-Stock

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1,652

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Digiode

USA . 1,590 parts In-Stock

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1,590

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LWI Electronics Inc

India . 3 parts In-Stock

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 1,328 parts In-Stock

1+ parts

$0.478

100+ parts

-

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$0.431

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1,328

$0.478

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$0.431

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MKK Technologies

India . 170 parts In-Stock

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$0.900

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170

$0.900

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DigiPath Technology Company

USA . 170 parts In-Stock

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$0.900

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170

$0.900

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AZTECH Wire

Italy . 735 parts In-Stock

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$15.010

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735

$15.010

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Component Stockers USA

USA . 399 parts In-Stock

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$99.990

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399

$99.990

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A-Z Elektronik GmbH

Germany . 6,762 parts In-Stock

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6,762

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Authorized Procurement Solutions

USA . 4,000 parts In-Stock

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4,000

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Corphita

USA . 2,863 parts In-Stock

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2,863

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Parana Technologies

USA . 1,628 parts In-Stock

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$0.572

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1,628

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$0.572

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Assy Fe

Spain . 1,000 parts In-Stock

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1,000

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Kepictronics

USA . 98 parts In-Stock

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Overview

Unlock the power of innovation with the ST2310FX from STMicroelectronics! This high-quality NPN power transistor is engineered for reliable switching applications, making it an ideal choice for your designs. With STMicroelectronics' renowned commitment to excellence, you can trust in exceptional performance and durability. Elevate your projects with a component that combines efficiency and robust handling of current, ensuring your systems run seamlessly and effectively, all while enjoying superior thermal management and flexibility.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures reliability and protection from environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are widely used in switching applications, providing better conductivity and performance in a range of electronic circuits.

Configuration: SINGLE

A single configuration keeps the design simple and compact, enabling ease of integration into various electronic systems.

Transistor Application: SWITCHING

Optimized for switching applications, this transistor delivers high efficiency and performance, making it ideal for controlling power in circuits.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient use of space on circuit boards and easy handling during assembly.

Terminal Form: THROUGH-HOLE

The through-hole terminal form provides strong mechanical and electrical connections, ensuring better stability in electronic assemblies.

No. of Terminals: 3

With three terminals, this transistor offers straightforward circuitry designs, making it easy to implement in a variety of applications.

Maximum Power Dissipation (Abs): 55 W

A high maximum power dissipation rating allows this transistor to handle substantial power loads, enhancing its versatility in demanding applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style provides enhanced mounting options, ensuring secure installation and stability in a range of settings.

Minimum DC Current Gain (hFE): 6.5

A minimum DC current gain of 6.5 indicates efficient amplification capabilities, making it suitable for signal processing applications.

Maximum Operating Temperature: 150 °C

Capable of operating at high temperatures, this transistor is reliable in environments where other components might fail.

Maximum Collector-Emitter Voltage: 600 V

A maximum voltage rating of 600 V allows this transistor to be used in high-voltage applications, broadening its usability.

Transistor Element Material: SILICON

Silicon as the element material ensures dependable performance and efficiency, as it is the standard material used in modern transistors.

Maximum Collector Current (IC): 7 A

The ability to handle a maximum collector current of 7 A makes this transistor ideal for high-current applications, ensuring robust performance.

Terminal Position: SINGLE

Single terminal positioning simplifies the layout in circuit designs, allowing for easier integration into various setups.

Case Connection: ISOLATED

Isolated case connections improve safety and performance by minimizing the risk of grounding issues in applications.

Peak Reflow Temperature °C: 245

A peak reflow temperature of 245 °C indicates compatibility with common PCB soldering processes, enhancing manufacturing efficiency.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST2310FX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

7 A

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Minimum DC Current Gain (hFE):

6.5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST2310FX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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