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ST2317DFX

STMicroelectronics

ST2317DFX by STMicroelectronics

ST2317DFX from STMicroelectronics is a robust NPN BJT designed for switching applications. It features a max power dissipation of 70W, collector-emitter voltage up to 600V, and operates at temperatures up to 150 °C. Ideal for high-power circuits with through-hole mounting.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,975 parts In-Stock

1+ parts

-

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3,975

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Vyrian

USA . 2,448 parts In-Stock

1+ parts

-

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-

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2,448

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Anansix

USA . 931 parts In-Stock

1+ parts

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931

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 2,163 parts In-Stock

1+ parts

$0.712

100+ parts

-

1k+ parts

$0.641

10k+ parts

-

2,163

$0.712

-

$0.641

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MKK Technologies

India . 1,056 parts In-Stock

1+ parts

$1.339

100+ parts

-

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10k+ parts

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1,056

$1.339

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DigiPath Technology Company

USA . 1,056 parts In-Stock

1+ parts

$1.339

100+ parts

-

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-

10k+ parts

-

1,056

$1.339

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-

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Corphita

USA . 766 parts In-Stock

1+ parts

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766

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Parana Technologies

USA . 106 parts In-Stock

1+ parts

-

100+ parts

$0.851

1k+ parts

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106

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$0.851

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Overview

Experience unmatched reliability and efficiency with the ST2317DFX from STMicroelectronics, a leader in semiconductor innovation. This robust NPN BJT is designed for seamless switching applications, offering you peace of mind with its high power handling and thermal resilience. Built with quality materials, it ensures longevity and peak performance, making it ideal for various electronic devices. Elevate your projects with a trusted solution that delivers value and excellence at every turn!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable packaging material provides excellent protection against environmental factors, making the product suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is widely used in electronic circuits, making this transistor versatile and easy to integrate into many designs.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for additional components, saving space and cost.

Transistor Application: SWITCHING

Optimized for switching applications, this BJT provides fast and reliable performance, making it ideal for control circuits.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient use of PCB space and can easily fit into existing designs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical stability and ease of handling during assembly.

No. of Terminals: 3

The three-terminal design offers straightforward connections, making it user-friendly for both novice and experienced engineers.

Maximum Power Dissipation (Abs): 70 W

A maximum power dissipation rating of 70 W ensures that the transistor can handle high-power applications without risk of overheating.

Package Style (Meter): FLANGE MOUNT

The flange mount style facilitates secure installation and improves thermal performance in high-power applications.

Minimum DC Current Gain (hFE): 6

A minimum hFE of 6 provides a reasonable amplification factor, enhancing signal strength in various circuits.

Maximum Operating Temperature: 150 °C

A high operating temperature limit makes this transistor suitable for use in environments with significant thermal challenges.

Maximum Collector-Emitter Voltage: 600 V

This high voltage capability allows the transistor to be used in demanding applications, such as power supplies and industrial systems.

Transistor Element Material: SILICON

Silicon transistors are known for their reliability and efficiency, ensuring high performance in practical applications.

Maximum Collector Current (IC): 10 A

With a maximum collector current of 10 A, this BJT can drive larger loads, making it suitable for a variety of applications.

Terminal Position: SINGLE

The single terminal position simplifies layout considerations and improves assembly efficiency in circuit designs.

Case Connection: ISOLATED

Isolated case connection reduces the risk of electrical shorts, enhancing safety and reliability in operation.

Peak Reflow Temperature °C: 245

A peak reflow temperature of 245 °C ensures compatibility with modern soldering processes, aiding in manufacturing efficiency.

Nominal Transition Frequency (fT): 2 MHz

A transition frequency of 2 MHz allows for high-speed switching, making it suitable for RF and high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST2317DFX attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Minimum DC Current Gain (hFE):

6

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

245

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ST2317DFX Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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