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ST2310DHI

STMicroelectronics

ST2310DHI by STMicroelectronics

ST2310DHI from STMicroelectronics is a robust NPN BJT designed for efficient switching applications. It features a max power dissipation of 55W, operates up to 150 °C, and supports collector-emitter voltages of 600V. Ideal for high-performance electronic circuits.

Median Price

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Lifecycle Status

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6

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1k+

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Vyrian

USA . 5,079 parts In-Stock

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Digiode

USA . 3,578 parts In-Stock

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Anansix

USA . 433 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 44 parts In-Stock

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LittleDiode

UK . 5 parts In-Stock

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Fibra_Brandt Electronic GMBH

Germany . 3 parts In-Stock

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IDEA Electronic Components Group

UK . 745 parts In-Stock

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$1.765

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$1.589

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745

$1.765

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$1.589

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MKK Technologies

India . 1,001 parts In-Stock

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$3.320

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DigiPath Technology Company

USA . 1,001 parts In-Stock

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$3.320

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$3.320

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AZTECH Wire

Italy . 899 parts In-Stock

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$21.950

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$21.950

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Corphita

USA . 4,723 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,155 parts In-Stock

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Assy Fe

Spain . 228 parts In-Stock

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Parana Technologies

USA . 218 parts In-Stock

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$2.111

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Overview

Unlock unparalleled performance with the ST2310DHI from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality NPN power BJT is engineered for reliable switching applications, offering robust efficiency and exceptional durability even under demanding conditions. With its advanced design featuring a built-in diode and resistor, it streamlines your circuit designs while minimizing space. Elevate your projects with confidence, knowing you have the backing of a trusted manufacturer that prioritizes quality and innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material provides protection against environmental factors, ensuring long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are versatile and widely used for switching applications, making this product suitable for a variety of circuits.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design, reduce space, and enhance reliability in applications.

Transistor Application: SWITCHING

Designed for switching, this transistor is ideal for applications that require efficient on/off control.

Package Shape: RECTANGULAR

The rectangular shape allows for easy integration into various circuit layouts.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure strong mechanical connection and ease of soldering to a PCB.

No. of Terminals: 3

Having three terminals allows for efficient connectivity and versatility in circuit designs.

Maximum Power Dissipation (Abs): 55 W

With a high power dissipation capability, this transistor can handle significant loads without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount design facilitates secure installation and provides stability in various applications.

Minimum DC Current Gain (hFE): 5.5

A minimum hFE of 5.5 ensures adequate amplification in linear applications, contributing to overall circuit efficiency.

Maximum Operating Temperature: 150 °C

A high operating temperature rating makes this transistor suitable for demanding environments.

Maximum Collector-Emitter Voltage: 600 V

The ability to handle up to 600 V allows this transistor to be utilized in high-voltage applications.

Transistor Element Material: SILICON

Silicon provides excellent thermal stability and performance, ensuring reliable operation under various conditions.

Maximum Collector Current (IC): 12 A

The high collector current capability allows the transistor to drive substantial loads effectively.

Terminal Position: SINGLE

Single terminal positioning simplifies the design and layout of the circuit, making it easier to implement.

Case Connection: ISOLATED

Isolated case connection enhances safety and prevents unwanted interactions with other components.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ST2310DHI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Minimum DC Current Gain (hFE):

5.5

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ST2310DHI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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