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BUL903ED

STMicroelectronics

BUL903ED by STMicroelectronics

BUL903ED by STMicroelectronics is a NPN Power BJT with 400V VCE, 5A IC, and 70W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package. Operating up to 150 °C, it has hFE of min. 20 and comes in a flange mount style with matte tin terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,173 parts In-Stock

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6,173

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Digiode

USA . 3,677 parts In-Stock

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3,677

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Anansix

USA . 2,531 parts In-Stock

1+ parts

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2,531

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Q Components

USA . 1,400 parts In-Stock

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1,400

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 841 parts In-Stock

1+ parts

$1.800

100+ parts

-

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$1.620

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-

841

$1.800

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$1.620

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MKK Technologies

India . 1,522 parts In-Stock

1+ parts

$3.386

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1,522

$3.386

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DigiPath Technology Company

USA . 1,522 parts In-Stock

1+ parts

$3.386

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1,522

$3.386

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AZTECH Wire

Italy . 529 parts In-Stock

1+ parts

$15.800

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529

$15.800

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Component Stockers USA

USA . 470 parts In-Stock

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$99.990

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470

$99.990

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Native Components

USA . 700 parts In-Stock

1+ parts

$649.590

100+ parts

$636.598

1k+ parts

$630.102

10k+ parts

$623.606

700

$649.590

$636.598

$630.102

$623.606

Northwest PG Solutions

USA . 1,438 parts In-Stock

1+ parts

$714.549

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1,438

$714.549

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,574 parts In-Stock

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Perfect Parts

USA . 3,409 parts In-Stock

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3,409

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Corphita

USA . 1,621 parts In-Stock

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1,621

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Parana Technologies

USA . 807 parts In-Stock

1+ parts

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$2.153

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807

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$2.153

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Overview

Unleash the power of innovation with the BUL903ED by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. With its superior performance and reliability, this NPN transistor offers a single configuration with a built-in diode, making it a versatile solution for various electronic projects. Its maximum collector-emitter voltage of 400V and maximum collector current of 5A ensure efficient operation, while the package style of flange mount provides easy installation. Trust STMicroelectronics to deliver cutting-edge technology that meets your needs and exceeds your expectations. Experience the value and benefits of the BUL903ED today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Allows for the transistor to be used in a wide range of circuits and applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Offers added functionality with the built-in diode, making it versatile for different circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring optimal performance in such scenarios.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into various systems and circuits.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure soldering onto circuit boards for reliable connections.

Maximum Power Dissipation (Abs): 70 W

Capable of handling high power levels, making it suitable for demanding applications.

Package Style (Meter): FLANGE MOUNT

Enables easy mounting and heat dissipation, ensuring efficient operation under various conditions.

Minimum DC Current Gain (hFE): 20

Provides consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for applications where heat dissipation is crucial.

Maximum Collector-Emitter Voltage: 400 V

Capable of handling high voltage levels, expanding its range of applications.

Transistor Element Material: SILICON

Offers reliable and consistent performance in various operating conditions.

Maximum Collector Current (IC): 5 A

Capable of handling high current levels, making it suitable for power applications.

Terminal Finish: Matte Tin (Sn)

Provides corrosion resistance and ensures secure electrical connections.

Terminal Position: SINGLE

Simplifies the installation process and facilitates circuit design.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL903ED attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

20

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL903ED Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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