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BUL98

STMicroelectronics

BUL98 by STMicroelectronics

BUL98 by STMicroelectronics is a NPN Power BJT with 450V VCEO, 12A IC, and 110W Ptot. Ideal for switching applications due to its single configuration and high power dissipation capability. The transistor's silicon element and matte tin finish make it reliable for use in various industrial settings.

Median Price

$3.440

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 234 parts In-Stock

1+ parts

$3.440

100+ parts

-

1k+ parts

$1.620

10k+ parts

$1.570

234

$3.440

-

$1.620

$1.570

DigiKey

USA . 70 parts In-Stock

1+ parts

$3.440

100+ parts

$1.756

1k+ parts

-

10k+ parts

-

70

$3.440

$1.756

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,731 parts In-Stock

1+ parts

$2.802

100+ parts

-

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-

10k+ parts

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2,731

$2.802

-

-

-

Martec Srl

Italy . 5,486 parts In-Stock

1+ parts

-

100+ parts

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5,486

-

-

-

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Vyrian

USA . 3,503 parts In-Stock

1+ parts

-

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3,503

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-

-

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Freddi Giovanni

Italy . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1,000

-

-

-

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Anansix

USA . 456 parts In-Stock

1+ parts

-

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456

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,178 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

$0.397

10k+ parts

-

1,178

$0.442

-

$0.397

-

MKK Technologies

India . 1,532 parts In-Stock

1+ parts

$0.830

100+ parts

-

1k+ parts

-

10k+ parts

-

1,532

$0.830

-

-

-

DigiPath Technology Company

USA . 1,532 parts In-Stock

1+ parts

$0.830

100+ parts

-

1k+ parts

-

10k+ parts

-

1,532

$0.830

-

-

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Corohmni

South Africa . 110 parts In-Stock

1+ parts

$1.113

100+ parts

-

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110

$1.113

-

-

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Advanced Electronics

New Zealand . 3,000 parts In-Stock

1+ parts

$1.984

100+ parts

$1.805

1k+ parts

$1.627

10k+ parts

-

3,000

$1.984

$1.805

$1.627

-

Corphita

USA . 1,509 parts In-Stock

1+ parts

$2.655

100+ parts

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1,509

$2.655

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-

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Northwest PG Solutions

USA . 410 parts In-Stock

1+ parts

$3.184

100+ parts

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410

$3.184

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Microchip USA

USA . 470 parts In-Stock

1+ parts

$18.980

100+ parts

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470

$18.980

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QUARKTWIN TECHNOLOGY LTD

USA . 16,129 parts In-Stock

1+ parts

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16,129

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Alle Elektronik GmbH

Germany . 1,395 parts In-Stock

1+ parts

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100+ parts

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1,395

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Native Components

USA . 552 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$2.808

10k+ parts

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552

-

-

$2.808

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Parana Technologies

USA . 334 parts In-Stock

1+ parts

-

100+ parts

$0.528

1k+ parts

-

10k+ parts

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334

-

$0.528

-

-

Overview

Elevate your power management game with the BUL98 by STMicroelectronics. Crafted with precision and quality in mind, this NPN Power Bipolar Junction Transistor offers unrivaled performance for switching applications. With a maximum collector-emitter voltage of 450V and a maximum power dissipation of 110W, this transistor is designed to handle even the most demanding tasks. Trust in STMicroelectronics' reputation for excellence and innovation, and experience the reliability and efficiency that the BUL98 brings to your projects. Upgrade your electronics with the BUL98 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable in various operating conditions.

Polarity or Channel Type: NPN

Suitable for applications where NPN transistors are preferred or required, offering versatility in circuit design.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance when turning on and off frequently.

Package Shape: RECTANGULAR

Efficient use of space and easy placement on circuit boards or mounting surfaces.

Terminal Form: THROUGH-HOLE

Facilitates easy and secure soldering onto circuit boards for reliable connections.

Maximum Power Dissipation (Abs): 110 W

Capable of handling high power levels, suitable for applications that require robust performance.

Package Style (Meter): FLANGE MOUNT

Allows for easy mounting and securing of the transistor in various applications.

Minimum DC Current Gain (hFE): 15

Ensures sufficient current amplification for the transistor to operate effectively in circuits.

Maximum Operating Temperature: 150 °C

Can withstand high operating temperatures, suitable for applications that generate heat.

Maximum Collector-Emitter Voltage: 450 V

Capable of handling large voltages, making it suitable for high-voltage applications.

Transistor Element Material: SILICON

Known for its reliability and efficiency in semiconductor devices, ensuring stable performance.

Maximum Collector Current (IC): 12 A

Ability to handle high currents, suitable for applications that require strong current flow.

Terminal Finish: MATTE TIN

Provides a reliable and durable finish for the terminals, ensuring good conductivity and solderability.

Terminal Position: SINGLE

Simplified terminal layout for easier connection in circuits, reducing the chances of wiring errors.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL98 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL98 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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