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BUL903EDFP

STMicroelectronics

BUL903EDFP by STMicroelectronics

BUL903EDFP from STMicroelectronics is an NPN power BJT designed for switching applications. It features a max collector-emitter voltage of 400 V, a power dissipation of 35 W, and operates at up to 150 °C. Its through-hole design ensures easy integration in various electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Q Components

USA . 2,400 parts In-Stock

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2,400

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Digiode

USA . 2,185 parts In-Stock

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2,185

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Anansix

USA . 1,458 parts In-Stock

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1,458

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Vyrian

USA . 289 parts In-Stock

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289

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,173 parts In-Stock

1+ parts

$0.649

100+ parts

-

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$0.584

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1,173

$0.649

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$0.584

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MKK Technologies

India . 2,259 parts In-Stock

1+ parts

$1.220

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2,259

$1.220

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DigiPath Technology Company

USA . 2,259 parts In-Stock

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$1.220

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2,259

$1.220

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Kepictronics

USA . 10,000 parts In-Stock

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10,000

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Parana Technologies

USA . 1,971 parts In-Stock

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$0.776

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1,971

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$0.776

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Northwest PG Solutions

USA . 1,324 parts In-Stock

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1,324

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Assy Fe

Spain . 990 parts In-Stock

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990

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Corphita

USA . 758 parts In-Stock

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758

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Native Components

USA . 196 parts In-Stock

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196

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Overview

Unlock exceptional performance in your electronic designs with the BUL903EDFP from STMicroelectronics. Renowned for its reliability, this NPN power BJT excels in switching applications, delivering robust power handling and thermal stability. Its durable plastic/epoxy package ensures long-lasting operation, making it ideal for a range of industrial and consumer electronics. Choose STMicroelectronics for quality and innovation that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction offers durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for high-speed operation and efficient switching, beneficial in many electronic circuits.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode provides additional protection and functionality, simplifying circuit design and enhancing reliability.

Transistor Application: SWITCHING

Designed for switching applications, this BJT is ideal for use in power control and amplification, providing versatility.

Package Shape: RECTANGULAR

The rectangular package shape aids in compact design and efficient space utilization on PCBs.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides excellent mechanical strength and ease of handling during assembly.

No. of Terminals: 3

Having three terminals facilitates easy connections and integration into various circuit configurations.

Maximum Power Dissipation (Abs): 35 W

With a maximum power dissipation of 35 W, this transistor can handle significant power loads, making it suitable for high-power applications.

Package Style (Meter): FLANGE MOUNT

The flange mount style supports stable and secure installation, ensuring reliable thermal management.

Minimum DC Current Gain (hFE): 8

A minimum DC current gain of 8 allows for effective amplification of small signals, enhancing circuit performance.

Maximum Operating Temperature: 150 °C

Able to operate at high temperatures (up to 150 °C), this BJT is suitable for demanding environments and applications.

Maximum Collector-Emitter Voltage: 400 V

With a high collector-emitter voltage rating of 400 V, it can be used in high-voltage applications safely and effectively.

Transistor Element Material: SILICON

Silicon material ensures good conductivity and performance, making this transistor widely applicable in electronic devices.

Maximum Collector Current (IC): 5 A

A maximum collector current of 5 A allows for powering a variety of loads, making it versatile for different circuit designs.

Terminal Finish: MATTE TIN

The matte tin finish provides good solderability and corrosion resistance, ensuring long-lasting performance.

Terminal Position: SINGLE

A single terminal position simplifies layout design, facilitating easier integration into various electronic setups.

Case Connection: ISOLATED

An isolated case connection enhances safety by preventing unintended circuit interactions, ensuring reliable operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL903EDFP attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

400 V

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL903EDFP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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