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BUF420M

STMicroelectronics

BUF420M by STMicroelectronics

BUF420M by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 200W power dissipation, and operates at a max temp of 200 °C. Ideal for high-performance electronic circuits requiring robust performance.

Median Price

$38.595

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Tomark Electronics Ltd

UK . 18 parts In-Stock

1+ parts

$5.190

100+ parts

-

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18

$5.190

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American Microsemiconductor Inc.

USA . 19 parts In-Stock

1+ parts

$72.000

100+ parts

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19

$72.000

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Vyrian

USA . 7,600 parts In-Stock

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7,600

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Digiode

USA . 3,011 parts In-Stock

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3,011

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Anansix

USA . 566 parts In-Stock

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566

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ECAB

Sweden . 20 parts In-Stock

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20

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LWI Electronics Inc

India . 14 parts In-Stock

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14

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,042 parts In-Stock

1+ parts

$1.574

100+ parts

-

1k+ parts

$1.417

10k+ parts

-

1,042

$1.574

-

$1.417

-

MKK Technologies

India . 394 parts In-Stock

1+ parts

$2.960

100+ parts

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394

$2.960

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DigiPath Technology Company

USA . 394 parts In-Stock

1+ parts

$2.960

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394

$2.960

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Native Components

USA . 141 parts In-Stock

1+ parts

$9.193

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141

$9.193

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Northwest PG Solutions

USA . 1,479 parts In-Stock

1+ parts

$10.113

100+ parts

$9.102

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1,479

$10.113

$9.102

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AZTECH Wire

Italy . 758 parts In-Stock

1+ parts

$17.480

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758

$17.480

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Kepictronics

USA . 13,000 parts In-Stock

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13,000

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Corphita

USA . 4,181 parts In-Stock

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4,181

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Parana Technologies

USA . 1,295 parts In-Stock

1+ parts

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100+ parts

$1.882

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1,295

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$1.882

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Overview

Unlock unparalleled performance with the BUF420M from STMicroelectronics, a leader in innovative semiconductor solutions. This high-quality NPN power transistor excels in switching applications, delivering exceptional reliability and robust efficiency. With its impressive power handling capabilities, it’s perfect for demanding environments—from industrial to automotive. Choose BUF420M for enhanced durability and superior performance that drives your projects forward seamlessly.

Feature Benefit Bullets

Package Body Material: METAL

Metal construction ensures robustness and effective heat dissipation, enhancing reliability in power applications.

Polarity or Channel Type: NPN

NPN configuration is widely used in various circuits, making it compatible with a variety of design needs.

Configuration: SINGLE

Single configuration simplifies circuit design and efficiency, making it ideal for space-constrained applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT delivers quick and reliable performance in power control.

Maximum VCEsat: 2 V

Low VCEsat minimizes power loss during operation, improving overall circuit efficiency.

Package Shape: ROUND

Round package shape offers flexibility in design and layout, making it suitable for various applications.

Terminal Form: PIN/PEG

PIN/PEG terminal form enables straightforward mounting and integration into circuit boards.

No. of Terminals: 2

Two terminals facilitate easy installation, reducing the complexity of circuit connections.

Maximum Power Dissipation (Abs): 200 W

High power dissipation capacity allows this transistor to manage larger loads safely and efficiently.

Package Style (Meter): FLANGE MOUNT

Flange mount style offers stability and robustness in installation, ideal for high-power applications.

Maximum Power Dissipation Ambient: 200 W

Allows for effective operation in high ambient temperatures, promoting reliability in challenging environments.

Maximum Operating Temperature: 200 °C

High operating temperature capability ensures that this BJT can function reliably in extreme conditions.

Maximum Collector-Emitter Voltage: 450 V

High voltage tolerance suited for a variety of high-voltage applications, broadening its usability.

Transistor Element Material: SILICON

Silicon material is well-understood and widely used, ensuring reliability and efficiency in performance.

Maximum Collector Current (IC): 30 A

Significant collector current capacity allows this transistor to drive larger loads without failure.

Maximum Turn Off Time (toff): 3620 ns

Fast turn off time facilitates high-speed switching applications, increasing overall system performance.

Terminal Finish: Matte Tin (Sn)

Matte tin finish provides excellent solderability and protection against corrosion, enhancing longevity.

Terminal Position: BOTTOM

Bottom terminal position allows for effective thermal management, essential in power transistors.

Case Connection: COLLECTOR

Designated collector connection simplifies implementation in power applications, ensuring effective functionality.

Nominal Transition Frequency (fT): 0.1 MHz

Low transition frequency is suitable for applications where high frequency is not a requirement, optimizing performance in typical switching scenarios.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF420M attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JEDEC-95 Code:

TO-3

JESD-30 Code:

O-MBFM-P2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

200 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

PIN/PEG

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3620 ns

Maximum VCEsat:

2 V

Trade Compliance

BUF420M Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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