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BUF410

STMicroelectronics

BUF410 by STMicroelectronics

BUF410 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 15A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient performance.

Median Price

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Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,988 parts In-Stock

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Anansix

USA . 2,180 parts In-Stock

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2,180

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LIBRA Elektronik GmbH

Germany . 268 parts In-Stock

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ECAB

Sweden . 224 parts In-Stock

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Vyrian

USA . 55 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 33 parts In-Stock

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Q Components

USA . 22 parts In-Stock

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Pegasus Components GmbH

Germany . 8 parts In-Stock

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Electronic Supply

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LittleDiode

UK . 3 parts In-Stock

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R&J Components

USA . 2 parts In-Stock

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IDEA Electronic Components Group

UK . 1,015 parts In-Stock

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$1.403

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$1.263

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$1.403

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Native Components

USA . 803 parts In-Stock

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$1.627

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Northwest PG Solutions

USA . 2,306 parts In-Stock

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MKK Technologies

India . 881 parts In-Stock

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$2.638

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DigiPath Technology Company

USA . 881 parts In-Stock

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$2.638

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Corphita

USA . 1,943 parts In-Stock

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Parana Technologies

USA . 1,459 parts In-Stock

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Assy Fe

Spain . 107 parts In-Stock

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Perfect Parts

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Overview

Unlock powerful performance with the BUF410 from STMicroelectronics, a trusted leader in semiconductor innovation. Designed for efficient switching applications, this NPN BJT delivers robust reliability and exceptional thermal management, ensuring your circuits operate seamlessly under demanding conditions. With its compact footprint and high power capabilities, the BUF410 is perfect for industrial and consumer electronics alike, offering unmatched value and durability to elevate your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides good mechanical strength and protection for reliable performance in various environments.

Polarity or Channel Type: NPN

NPN transistors are widely used for high-speed switching applications, making this transistor suitable for various circuits.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, making it easier for engineers to utilize in their applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this BJT delivers fast response times and high efficiency.

Maximum VCEsat: 2 V

Low VCEsat ensures minimal voltage drop when the transistor is on, leading to better performance and lower power loss.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient layout on PCBs and optimized use of space in tight designs.

Terminal Form: THROUGH-HOLE

Through-hole technology provides strong mechanical bonds, making it a good choice for high-stress applications.

No. of Terminals: 3

With three terminals, this transistor is easy to connect in simple circuits, enhancing versatility in applications.

Maximum Power Dissipation (Abs): 125 W

High power dissipation capability enables reliable operation under heavy loads, improving overall system performance.

Package Style (Meter): FLANGE MOUNT

Flange mount style improves heat dissipation and ensures stable mounting, crucial for long-term reliability.

Maximum Power Dissipation Ambient: 125 W

Capable of handling high ambient temperatures, this specification is crucial for applications in demanding thermal conditions.

Maximum Operating Temperature: 150 °C

Operating at high temperatures allows this transistor to be used in extreme environments without failure.

Maximum Collector-Emitter Voltage: 450 V

High voltage tolerance makes this transistor suitable for applications requiring robust voltage management.

Transistor Element Material: SILICON

Silicon enhances efficiency and performance, making this transistor a reliable choice in electronic circuits.

Maximum Collector Current (IC): 15 A

With a high collector current rating, this transistor is suitable for driving significant loads, adding to its application range.

Maximum Turn Off Time (toff): 3320 ns

Fast turn-off time maximizes switching speed, allowing for efficient operation in high-frequency applications.

Terminal Position: SINGLE

Single terminal position facilitates easy connectivity and circuit integration, enhancing user-friendliness.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF410 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JEDEC-95 Code:

TO-218

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

125 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

3320 ns

Maximum VCEsat:

2 V

Trade Compliance

BUF410 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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