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BUF410AI

STMicroelectronics

BUF410AI by STMicroelectronics

BUF410AI by STMicroelectronics is a NPN BJT transistor with 450V VCE, 15A IC, and 85W power dissipation. Ideal for switching applications, it has a max operating temperature of 150 °C and a turn-off time of 3320ns. The package style is flange mount with through-hole terminals in a rectangular shape.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,249 parts In-Stock

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Anansix

USA . 2,845 parts In-Stock

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2,845

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Vyrian

USA . 215 parts In-Stock

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ComSIT Distribution GmbH

Germany . 113 parts In-Stock

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Electronics Depot

USA . 19 parts In-Stock

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ECAB

Sweden . 6 parts In-Stock

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IDEA Electronic Components Group

UK . 102 parts In-Stock

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$1.365

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$1.229

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102

$1.365

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$1.229

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MKK Technologies

India . 2,335 parts In-Stock

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$2.567

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2,335

$2.567

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DigiPath Technology Company

USA . 2,335 parts In-Stock

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$2.567

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$2.567

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Corphita

USA . 1,560 parts In-Stock

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1,560

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Northwest PG Solutions

USA . 1,120 parts In-Stock

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Parana Technologies

USA . 771 parts In-Stock

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$1.632

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Native Components

USA . 520 parts In-Stock

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520

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Overview

Upgrade your power systems with the BUF410AI from STMicroelectronics, a leading manufacturer known for high-quality components. This NPN Power BJT offers reliable switching capabilities and a maximum collector-emitter voltage of 450V, making it ideal for a variety of applications. With a maximum power dissipation of 85W and a nominal transition frequency of 0.1 MHz, this transistor provides efficient performance and durability. Trust in STMicroelectronics to deliver top-notch products that bring value and reliability to your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal and electrical insulation, which helps in enhancing the overall performance and reliability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, making this transistor versatile for a variety of circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and makes the transistor easy to implement in various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and high efficiency.

Maximum VCEsat: 2.8 V

With a low VCEsat value, this transistor can operate efficiently with minimal voltage drop across the collector-emitter junction.

Package Shape: RECTANGULAR

The rectangular shape provides a convenient form factor for mounting and integrating the transistor into electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals are easier to solder and provide a more secure connection in comparison to surface-mount components.

Maximum Power Dissipation (Abs): 85 W

With a high power dissipation rating, this transistor can handle large loads and operate reliably under heavy-duty conditions.

Maximum Collector-Emitter Voltage: 450 V

The high voltage rating allows the transistor to be used in applications where high voltage levels are present without risking damage.

Maximum Collector Current (IC): 15 A

Capable of handling high current levels, this transistor is suitable for power amplification and switching tasks that require high current flow.

Nominal Transition Frequency (fT): 0.1 MHz

The high transition frequency enables the transistor to operate at high speeds, making it ideal for high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF410AI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JESD-30 Code:

R-CSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

85 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3320 ns

Maximum VCEsat:

2.8 V

Trade Compliance

BUF410AI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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