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BUF420I

STMicroelectronics

BUF420I by STMicroelectronics

BUF420I by STMicroelectronics is a NPN BJT transistor with VCEsat of 2.8V, IC of 30A, and VCEO of 450V. Ideal for switching applications due to its high power dissipation (115W) and low turn-off time (3620ns). Package style is flange mount with ceramic-metal body suitable for isolated case connections.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Vyrian

USA . 1,893 parts In-Stock

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Digiode

USA . 1,584 parts In-Stock

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ComSIT Distribution GmbH

Germany . 717 parts In-Stock

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Anansix

USA . 220 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 68 parts In-Stock

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ECAB

Sweden . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 2,339 parts In-Stock

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$1.782

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$1.604

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$1.782

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$1.604

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Northwest PG Solutions

USA . 2,138 parts In-Stock

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$2.805

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$2.805

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MKK Technologies

India . 656 parts In-Stock

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$3.351

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DigiPath Technology Company

USA . 656 parts In-Stock

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$3.351

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$3.351

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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Corphita

USA . 3,463 parts In-Stock

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Parana Technologies

USA . 1,569 parts In-Stock

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$2.131

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Native Components

USA . 669 parts In-Stock

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$2.473

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$2.473

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Overview

Unleash the power of innovation with the STMicroelectronics BUF420I Power BJT transistor. Designed with precision and expertise, this NPN transistor offers unmatched performance in switching applications. With a maximum VCEsat of 2.8V and a maximum collector current of 30A, this transistor delivers reliable and efficient operation. From its ceramic, metal-sealed package to its flange mount style, every detail is crafted for excellence. Trust STMicroelectronics for cutting-edge technology that propels your projects forward. Elevate your designs with the BUF420I and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material ensures durable and reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification and switching applications, making this product versatile.

Maximum VCEsat: 2.8 V

Low VCEsat voltage helps in reducing power loss and improving efficiency.

Maximum Power Dissipation: 115 W

High power dissipation capability allows this transistor to handle heavy loads without overheating.

Maximum Collector-Emitter Voltage: 450 V

With a high VCE voltage rating, this transistor can be used in high voltage applications.

Maximum Collector Current (IC): 30 A

High collector current rating makes this transistor suitable for applications requiring high current handling capability.

Maximum Turn Off Time (toff): 3620 ns

Fast turn-off time ensures quick response in switching applications.

Nominal Transition Frequency (fT): 0.1 MHz

Higher transition frequency allows for faster operation in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF420I attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JESD-30 Code:

R-CSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

115 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3620 ns

Maximum VCEsat:

2.8 V

Trade Compliance

BUF420I Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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