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BUF405AFI

STMicroelectronics

BUF405AFI by STMicroelectronics

BUF405AFI by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max VCEsat of 2V, supports up to 7.5A collector current, and operates at temperatures up to 150 °C. Ideal for high-power circuits with efficient performance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,391 parts In-Stock

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3,391

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Anansix

USA . 812 parts In-Stock

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812

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Digiode

USA . 388 parts In-Stock

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388

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ACDS - Activité Composants Distribution Service

France . 300 parts In-Stock

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300

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LittleDiode

UK . 5 parts In-Stock

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5

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 734 parts In-Stock

1+ parts

$0.892

100+ parts

-

1k+ parts

$0.803

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734

$0.892

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$0.803

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MKK Technologies

India . 1,401 parts In-Stock

1+ parts

$1.678

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1,401

$1.678

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DigiPath Technology Company

USA . 1,401 parts In-Stock

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$1.678

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1,401

$1.678

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Native Components

USA . 335 parts In-Stock

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$4.942

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335

$4.942

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Corphita

USA . 4,478 parts In-Stock

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4,478

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Northwest PG Solutions

USA . 2,310 parts In-Stock

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$4.843

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2,310

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$4.843

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Parana Technologies

USA . 1,875 parts In-Stock

1+ parts

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$1.067

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1,875

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$1.067

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Perfect Parts

USA . 672 parts In-Stock

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672

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Cyclops Electronics Ltd (Excess)

UK . 300 parts In-Stock

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300

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Glotronic Ltd.

UK . 240 parts In-Stock

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240

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Assy Fe

Spain . 26 parts In-Stock

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Overview

Elevate your electronic designs with the BUF405AFI from STMicroelectronics, a trusted leader in innovative power solutions. This NPN power bipolar junction transistor delivers exceptional reliability and performance for switching applications, ensuring seamless operation even in demanding environments. With its robust construction and impressive power handling capabilities, the BUF405AFI empowers engineers to create efficient, high-performance systems that stand the test of time. Choose quality and excellence—choose STMicroelectronics!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy material ensures reliability and longevity, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN type transistors are commonly used for switching applications, making this product versatile for different circuit designs.

Configuration: SINGLE

A single configuration offers simplicity and ease of integration into various electronic circuits.

Transistor Application: SWITCHING

Ideal for switching applications, this BJT provides efficient control of electrical signals.

Maximum VCEsat: 2 V

Low VCEsat improves efficiency during operation, minimizing power loss in switching applications.

Package Shape: RECTANGULAR

The rectangular shape provides a compact footprint, suitable for space-constrained designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure robust mechanical stability and ease of soldering during assembly.

No. of Terminals: 3

Having three terminals simplifies circuit design, facilitating easy connectivity to other components.

Maximum Power Dissipation (Abs): 40 W

High power dissipation capability allows this BJT to handle substantial power loads efficiently.

Package Style (Meter): FLANGE MOUNT

Flange mount style enhances stability and heatsink attachment for improved thermal management.

Maximum Power Dissipation Ambient: 40 W

Consistent power dissipation in ambient conditions ensures reliable performance across various environments.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows this BJT to function effectively in demanding thermal conditions.

Maximum Collector-Emitter Voltage: 450 V

High voltage rating makes this transistor suitable for applications that require handling of significant voltages.

Transistor Element Material: SILICON

Silicon material is known for its excellent electrical properties and stability, enhancing the performance of the transistor.

Maximum Collector Current (IC): 7.5 A

Support for high collector current makes this BJT ideal for driving powerful loads in various applications.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and reduces the risk of corrosion, ensuring long-term reliability.

Terminal Position: SINGLE

Single terminal position simplifies layout and design, allowing for easier integration in circuit boards.

Case Connection: ISOLATED

Isolated case connection enhances safety and performance by preventing unwanted interactions with surrounding components.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF405AFI attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

40 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BUF405AFI Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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