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BUF460AV

STMicroelectronics

BUF460AV by STMicroelectronics

BUF460AV by STMicroelectronics is a NPN BJT transistor with max VCEsat of 2V, IC of 90A, and Pmax of 270W. Ideal for switching applications due to its fast tf of 200ns and high VCEO of 450V. Package style is flange mount with isolated case connection.

Median Price

$96.500

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

American Microsemiconductor Inc.

USA . 65 parts In-Stock

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$96.500

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65

$96.500

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Digiode

USA . 4,525 parts In-Stock

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4,525

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Vyrian

USA . 2,606 parts In-Stock

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2,606

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Anansix

USA . 2,359 parts In-Stock

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2,359

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IDEA Electronic Components Group

UK . 1,434 parts In-Stock

1+ parts

$0.647

100+ parts

-

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$0.582

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1,434

$0.647

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$0.582

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MKK Technologies

India . 615 parts In-Stock

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$1.216

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615

$1.216

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DigiPath Technology Company

USA . 615 parts In-Stock

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$1.216

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615

$1.216

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Northwest PG Solutions

USA . 1,746 parts In-Stock

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$2.519

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1,746

$2.519

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AZTECH Wire

Italy . 768 parts In-Stock

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$12.690

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768

$12.690

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Component Stockers USA

USA . 473 parts In-Stock

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$99.990

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473

$99.990

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,963 parts In-Stock

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4,963

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A-Z Elektronik GmbH

Germany . 2,394 parts In-Stock

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2,394

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Corphita

USA . 2,023 parts In-Stock

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2,023

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Native Components

USA . 447 parts In-Stock

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$2.221

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447

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$2.221

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Parana Technologies

USA . 67 parts In-Stock

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$0.773

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67

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$0.773

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Assy Fe

Spain . 3 parts In-Stock

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3

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Overview

Upgrade your power systems with the BUF460AV by STMicroelectronics. As a leading manufacturer in the industry, STMicroelectronics delivers top-quality Power Bipolar Junction Transistors (BJT) like the BUF460AV, which offers incredible switching capabilities and a maximum collector-emitter voltage of 450V. Perfect for a variety of applications, this NPN transistor provides a maximum power dissipation of 270W and a collector current of 90A. Trust STMicroelectronics to provide reliable and efficient components for your next project. Experience the value and benefits of the BUF460AV today!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in switching applications due to their high efficiency and fast switching speeds.

Maximum VCEsat: 2 V

Low VCEsat value indicates minimal energy loss and high efficiency during switching operations.

Maximum Fall Time (tf): 200 ns

Fast fall time ensures quick switching transitions, essential for efficient power handling.

Maximum Power Dissipation: 270 W

High power dissipation capacity allows for handling large amounts of power without overheating.

Maximum Collector-Emitter Voltage: 450 V

High VCEmax rating enables the transistor to handle high-voltage applications with ease.

Maximum Collector Current (IC): 90 A

High current-carrying capacity makes the transistor suitable for applications requiring high power output.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUF460AV attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

450 V

Configuration:

Maximum Fall Time (tf):

200 ns

JESD-30 Code:

R-XUFM-X3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

270 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Power

Surface Mount:

NO

Terminal Finish:

NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

2 V

Trade Compliance

BUF460AV Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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