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BUL1403ED

STMicroelectronics

BUL1403ED by STMicroelectronics

BUL1403ED by STMicroelectronics is a NPN Power BJT with 650V VCE, 3A IC, and 80W Ptot. Ideal for switching applications, it features a single configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150 °C, it has hFE of min 4 and matte tin terminals.

Median Price

$1.310

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,055 parts In-Stock

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-

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6,055

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-

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Digiode

USA . 3,895 parts In-Stock

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3,895

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Anansix

USA . 434 parts In-Stock

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434

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ComSIT Distribution GmbH

Germany . 400 parts In-Stock

1+ parts

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400

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-

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Lakeland Logistics Inc

USA . 50 parts In-Stock

1+ parts

-

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50

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Bristol Electronics

USA . 50 parts In-Stock

1+ parts

-

100+ parts

$1.310

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-

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50

-

$1.310

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 360 parts In-Stock

1+ parts

$0.425

100+ parts

-

1k+ parts

-

10k+ parts

$0.408

360

$0.425

-

-

$0.408

Northwest PG Solutions

USA . 1,976 parts In-Stock

1+ parts

$0.467

100+ parts

-

1k+ parts

-

10k+ parts

$0.412

1,976

$0.467

-

-

$0.412

IDEA Electronic Components Group

UK . 434 parts In-Stock

1+ parts

$1.309

100+ parts

-

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$1.178

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-

434

$1.309

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$1.178

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MKK Technologies

India . 126 parts In-Stock

1+ parts

$2.462

100+ parts

-

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126

$2.462

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DigiPath Technology Company

USA . 126 parts In-Stock

1+ parts

$2.462

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-

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126

$2.462

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AZTECH Wire

Italy . 800 parts In-Stock

1+ parts

$21.860

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800

$21.860

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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56,986

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QUARKTWIN TECHNOLOGY LTD

USA . 26,075 parts In-Stock

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Corphita

USA . 4,188 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Robosynatics

Brazil . 500 parts In-Stock

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500

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Lucentia Tech

USA . 500 parts In-Stock

1+ parts

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100+ parts

$0.403

1k+ parts

$0.373

10k+ parts

$0.373

500

-

$0.403

$0.373

$0.373

Parana Technologies

USA . 372 parts In-Stock

1+ parts

-

100+ parts

$1.565

1k+ parts

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372

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$1.565

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A-Z Elektronik GmbH

Germany . 363 parts In-Stock

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363

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Kepictronics

USA . 242 parts In-Stock

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242

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RC Electronics

USA . 120 parts In-Stock

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120

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Overview

STMicroelectronics presents the BUL1403ED, a high-quality Power Bipolar Junction Transistor designed for switching applications. With a maximum collector-emitter voltage of 650V and a maximum operating temperature of 150 °C, this NPN transistor offers reliable performance and durability. Its single configuration with a built-in diode ensures ease of use, while the 80W maximum power dissipation guarantees efficiency. Trust in STMicroelectronics' expertise and innovation to deliver exceptional value and benefits for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching purposes, offering versatility in circuit designs.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for more efficient switching and protection against back EMF, making it suitable for applications where diode protection is needed.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring fast and reliable performance in turning on and off electrical circuits.

Package Shape: RECTANGULAR

The rectangular shape makes it easy to mount and integrate into circuit boards, providing a compact and space-efficient solution.

Terminal Form: THROUGH-HOLE

Through-hole terminals offer secure and reliable connections, making it easy to solder onto PCBs and ensuring stable electrical contact.

No. of Terminals: 3

With three terminals, this transistor can be easily integrated into circuits for various applications, providing flexibility in usage.

Maximum Power Dissipation (Abs): 80 W

The high power dissipation capability allows the transistor to handle large amounts of power without overheating, ensuring reliable operation under heavy loads.

Package Style (Meter): FLANGE MOUNT

The flange mount package style provides a stable and secure mounting method, suitable for applications where mechanical stability is important.

Minimum DC Current Gain (hFE): 4

The minimum DC current gain of 4 ensures that the transistor can amplify current effectively, providing consistent and reliable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this transistor can withstand elevated temperatures, making it suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 650 V

The high collector-emitter voltage rating of 650V allows the transistor to handle high voltage applications, ensuring reliable performance in demanding voltage conditions.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them suitable for a wide range of applications from audio amplification to power switching.

Maximum Collector Current (IC): 3 A

With a maximum collector current of 3A, this transistor can handle moderate to high current loads, making it suitable for power switching applications.

Terminal Finish: Matte Tin (Sn)

The matte tin terminal finish provides good solderability and corrosion resistance, ensuring stable electrical connections and long-term reliability.

Terminal Position: SINGLE

The single terminal position simplifies circuit integration and soldering, making it easy to handle and install in various electronic devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL1403ED attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

650 V

Minimum DC Current Gain (hFE):

4

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BUL1403ED Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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