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BUL416

STMicroelectronics

BUL416 by STMicroelectronics

BUL416 by STMicroelectronics is a NPN power BJT transistor with max VCEsat of 3V, IC of 6A, and hFE of 10. Ideal for switching applications, it has a max power dissipation of 85W and operates at up to 150 °C. The package style is flange mount with matte tin terminal finish.

Median Price

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Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

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Q Components

USA . 13,750 parts In-Stock

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13,750

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Vyrian

USA . 6,962 parts In-Stock

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6,962

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Digiode

USA . 4,593 parts In-Stock

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4,593

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Anansix

USA . 1,116 parts In-Stock

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1,116

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Electronic Expediters

USA . 306 parts In-Stock

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306

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ACDS - Activité Composants Distribution Service

France . 50 parts In-Stock

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50

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Bristol Electronics

USA . 50 parts In-Stock

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50

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ComSIT Distribution GmbH

Germany . 50 parts In-Stock

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50

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Distributors (Availability)

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IDEA Electronic Components Group

UK . 2,310 parts In-Stock

1+ parts

$1.737

100+ parts

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$1.563

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2,310

$1.737

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$1.563

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MKK Technologies

India . 1,562 parts In-Stock

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$3.266

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1,562

$3.266

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DigiPath Technology Company

USA . 1,562 parts In-Stock

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$3.266

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1,562

$3.266

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AZTECH Wire

Italy . 979 parts In-Stock

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$22.000

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979

$22.000

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Component Stockers USA

USA . 349 parts In-Stock

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$99.990

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349

$99.990

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Native Components

USA . 99 parts In-Stock

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$448.450

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$439.481

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$434.997

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$430.512

99

$448.450

$439.481

$434.997

$430.512

Northwest PG Solutions

USA . 674 parts In-Stock

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$493.295

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674

$493.295

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Corphita

USA . 4,732 parts In-Stock

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Parana Technologies

USA . 1,752 parts In-Stock

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$2.077

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$2.077

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Kepictronics

USA . 121 parts In-Stock

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121

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Perfect Parts

USA . 112 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 50 parts In-Stock

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Overview

Upgrade your power systems with the BUL416 by STMicroelectronics, a high-quality Power Bipolar Junction Transistor designed for switching applications. Manufactured by industry leader STMicroelectronics, this NPN transistor offers unparalleled performance and reliability. With a maximum collector-emitter voltage of 800V and a maximum power dissipation of 110W, the BUL416 is perfect for demanding industrial and automotive applications. Experience the value and benefits of this product today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Single configuration transistors are easy to handle and integrate into circuits, simplifying the design process.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance in switching circuits.

Maximum VCEsat: 3 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, leading to higher efficiency in power switching applications.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and alignment in circuit boards, facilitating assembly and soldering processes.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections to the circuit board, ensuring reliability and stability in operation.

Maximum Power Dissipation (Abs): 85 W

High absolute power dissipation rating enables the transistor to handle high-power applications without overheating or damage.

Package Style (Meter): FLANGE MOUNT

Flange mount package style offers mechanical stability and ease of installation, suitable for industrial or automotive applications.

Maximum Power Dissipation Ambient: 110 W

High ambient power dissipation rating allows the transistor to operate effectively in a wide range of environmental conditions.

Minimum DC Current Gain (hFE): 10

Minimum DC current gain ensures reliable and consistent amplification of input signals, maintaining signal integrity in the circuit.

Maximum Operating Temperature: 150 °C

High maximum operating temperature makes the transistor suitable for demanding industrial or automotive applications where temperature variations are common.

Maximum Collector-Emitter Voltage: 800 V

High collector-emitter voltage rating allows the transistor to handle high voltage loads or switching applications without breakdown or damage.

Transistor Element Material: SILICON

Silicon-based transistor elements offer high performance, reliability, and stability in various operating conditions, making them a popular choice in electronic devices.

Maximum Collector Current (IC): 6 A

High collector current rating enables the transistor to handle high current loads, making it suitable for power switching applications or motor control circuits.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring long-term reliability and stability in the circuit.

Terminal Position: SINGLE

Single terminal position simplifies circuit connectivity and reduces the risk of errors during installation, ensuring proper operation of the transistor.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL416 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

800 V

Configuration:

Minimum DC Current Gain (hFE):

10

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

110 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

BUL416 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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