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BUL44AJ

Onsemi

BUL44AJ by Onsemi

BUL44AJ by Onsemi is a NPN Power BJT with max. VCE of 400V and IC of 2A. With hFE of min. 8, it's ideal for switching applications in electronics due to its high transition frequency of 13MHz. The transistor comes in a rectangular package style with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 1,209 parts In-Stock

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Vyrian

USA . 628 parts In-Stock

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Native Components

USA . 357 parts In-Stock

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$0.750

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357

$0.750

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Northwest PG Solutions

USA . 925 parts In-Stock

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$0.825

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925

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Kulean Microsystems

USA . 5,667 parts In-Stock

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SupplyDigital Components

Austria . 4,405 parts In-Stock

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TANS Electronics

Latvia . 1,306 parts In-Stock

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Corphita

USA . 963 parts In-Stock

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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Corohmni

South Africa . 484 parts In-Stock

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Problanco Electronics

Mexico . 135 parts In-Stock

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Overview

Experience the power of innovation with the BUL44AJ by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Bipolar Junction Transistors that excel in switching applications. With a maximum collector-emitter voltage of 400V and a maximum collector current of 2A, this NPN transistor offers unparalleled performance and reliability. Whether you're designing industrial equipment or automotive systems, the BUL44AJ provides the perfect solution for your power management needs. Trust Onsemi to deliver cutting-edge technology that exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor for long-term use.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications.

Configuration: SINGLE

Simplified circuit design with only one transistor needed.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required.

Package Shape: RECTANGULAR

Allows for easy mounting and integration into circuit designs.

Terminal Form: THROUGH-HOLE

Easily soldered onto circuit boards for secure connections.

No. of Terminals: 3

Simplifies the connection and usage of the transistor in circuits.

Package Style (Meter): FLANGE MOUNT

Provides a stable and secure mounting option for the transistor.

Minimum DC Current Gain (hFE): 8

Ensures reliable and consistent performance in amplification applications.

Maximum Collector-Emitter Voltage: 400 V

Supports high voltage operation in various electronic circuits.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability for electronic applications.

Maximum Collector Current (IC): 2 A

Suitable for applications requiring higher current levels.

Terminal Finish: TIN LEAD

Provides corrosion resistance and ensures reliable connections.

Terminal Position: SINGLE

Simplifies the installation and connection process in electronic circuits.

Case Connection: COLLECTOR

Specific design for efficient current conduction and heat dissipation.

Nominal Transition Frequency (fT): 13 MHz

Supports high-frequency operation in a variety of electronic applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL44AJ attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL44AJ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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