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BUL44

Onsemi

BUL44 by Onsemi

BUL44 by Onsemi is a NPN Power BJT with 400V VCEO, 2A IC, and 50W Ptot. Ideal for switching applications, it has a min hFE of 8 and operates up to 150 °C. The transistor comes in a plastic/epoxy package with through-hole terminals for easy mounting.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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ACDS - Activité Composants Distribution Service

France . 2,320 parts In-Stock

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Digiode

USA . 1,542 parts In-Stock

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J2 Sourcing AB

Sweden . 263 parts In-Stock

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Vyrian

USA . 64 parts In-Stock

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LittleDiode

UK . 7 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 434 parts In-Stock

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$3,967.610

100+ parts

$3,888.258

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$3,848.582

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$3,808.906

434

$3,967.610

$3,888.258

$3,848.582

$3,808.906

Northwest PG Solutions

USA . 1,832 parts In-Stock

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$4,364.371

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,502 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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SupplyDigital Components

Austria . 6,661 parts In-Stock

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Perfect Parts

USA . 5,197 parts In-Stock

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Authorized Procurement Solutions

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Problanco Electronics

Mexico . 3,458 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,320 parts In-Stock

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Glotronic Ltd.

UK . 1,856 parts In-Stock

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TANS Electronics

Latvia . 1,498 parts In-Stock

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Kulean Microsystems

USA . 1,115 parts In-Stock

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Corphita

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Assy Fe

Spain . 331 parts In-Stock

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UHIMA Technologies

Türkiye . 91 parts In-Stock

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Corohmni

South Africa . 87 parts In-Stock

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Overview

Upgrade your power electronics with the BUL44 by Onsemi! This high-quality Power Bipolar Junction Transistor offers reliable performance for a variety of switching applications. With a maximum collector-emitter voltage of 400V and a maximum power dissipation of 50W, this NPN transistor is a versatile solution for your projects. Whether you're designing power supplies, inverters, or motor control systems, the BUL44 provides exceptional value and efficiency. Trust in Onsemi's reputation for top-notch manufacturing to deliver a product that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring a longer lifespan in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in different applications.

Maximum Power Dissipation (Abs): 50 W

With a high power dissipation capability, this transistor can handle significant loads without overheating or failing.

Maximum Collector-Emitter Voltage: 400 V

Capable of withstanding high voltages, making it suitable for applications where high voltage switching is required.

Maximum Collector Current (IC): 2 A

With a high collector current rating, this transistor can handle larger currents, making it suitable for high-power switching applications.

Nominal Transition Frequency (fT): 13 MHz

The high transition frequency allows for fast switching speeds, ideal for applications requiring quick on/off cycles.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BUL44 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

LEADFORM OPTIONS ARE AVAILABLE

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

8

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BUL44 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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